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ZXMC3A18DN8TA

Description
mosfet 30v complementary enhancement mode
Categorysemiconductor    Discrete semiconductor   
File Size669KB,12 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Environmental Compliance  
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ZXMC3A18DN8TA Overview

mosfet 30v complementary enhancement mode

ZXMC3A18DN8TA Parametric

Parameter NameAttribute value
ManufactureDiodes Incorporated
Product CategoryMOSFET
RoHSYes
Transistor PolarityN and P-Channel
Vds - Drain-Source Breakdown Voltage30 V
Vgs - Gate-Source Breakdown Voltage20 V
Id - Continuous Drain Curre7.6 A
Rds On - Drain-Source Resistance25 mOhms
ConfiguratiComplementary
Maximum Operating Temperature+ 150 C
Pd - Power Dissipati2.1 W
Mounting StyleSMD/SMT
Package / CaseSOIC-8
PackagingReel
Channel ModeEnhanceme
Fall Time8.5 ns, 38 ns
Minimum Operating Temperature- 55 C
Rise Time8.7 ns, 9.5 ns
Factory Pack Quantity500
Typical Turn-Off Delay Time33 ns, 60 ns
ZXMC3A18DN8
Complementary 30V enhancement mode MOSFET
Summary
N-Channel = V
(BR)DSS
= 30V : R
DS(on)
= 0.025 ; I
D
= 7.6A
P-Channel = V
(BR)DSS
= -30V : R
DS(on)
= 0.035 ; I
D
= -6.3A
Description
This new generation of trench MOSFETs from Zetex
utilizes a unique structure that combines the benefits of
low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power
management applications.
D1
D2
G1
S1
Q1 N-Channel
G2
S2
Q2 P-Channel
Features
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
S1
G1
S2
D1
D1
D2
D2
Applications
Motor Drive
LCD backlighting
G2
SO8
Ordering information
Device
ZXMC3A18DN8TC
Reel size
(inches)
13
Tape width
(mm)
12
Quantity
per reel
2500
Device marking
ZXMC
3A18
Issue 2 - September 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com
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