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BFG10/X,215

Description
transistors RF bipolar single npn 8V 250ma 400mw 25
Categorysemiconductor    Discrete semiconductor   
File Size252KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance  
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BFG10/X,215 Overview

transistors RF bipolar single npn 8V 250ma 400mw 25

BFG10/X,215 Parametric

Parameter NameAttribute value
ManufactureNXP
Product CategoryTransistors RF Bipol
RoHSYes
TypeRF Bipolar Small Signal
Transistor PolarityNPN
DC Collector/Base Gain hfe Mi25
Collector- Emitter Voltage VCEO Max8 V
Emitter- Base Voltage VEBO2.5 V
Continuous Collector Curre250 mA
Power Dissipati400 mW
ConfiguratiSingle
Mounting StyleSMD/SMT
Package / CaseSOT-143
PackagingReel
Factory Pack Quantity3000
BFG10; BFG10/X
NPN 2 GHz RF power transistor
Rev. 05 — 22 November 2007
Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your
cooperation and understanding,
NXP Semiconductors
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