BTA416Y-800B
3Q Hi-Com Triac
10 June 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB)
internally insulated plastic package intended for use in circuits where high static and
dynamic dV/dt and high dI/dt can occur. This "series B" triac will commutate the full RMS
current at the maximum rated junction temperature without the aid of a snubber. This
device has high T
j
operating capability and an internally isolated mounting base.
2. Features and benefits
•
•
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High surge capability
High T
j(max)
Isolated mounting base with 2500 V (RMS) isolation
Least sensitive gate for highest noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
Very high immunity to false turn-on by dV/dt
3. Applications
•
•
•
Electronic thermostats (heating and cooling)
High power motor controls
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
T
j
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
junction temperature
RMS on-state current
full sine wave; T
mb
≤ 108 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max
800
160
150
16
Unit
V
A
°C
A
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TO
-2
20A
B
NXP Semiconductors
BTA416Y-800B
3Q Hi-Com Triac
Symbol
I
GT
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
2
2
2
Typ
-
-
-
Max
50
50
50
Unit
mA
mA
mA
Static characteristics
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220AB (SOT78D)
6. Ordering information
Table 3.
Ordering information
Package
Name
BTA416Y-800B
TO-220AB
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220
Version
SOT78D
Type number
BTA416Y-800B
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
10 June 2014
2 / 13
NXP Semiconductors
BTA416Y-800B
3Q Hi-Com Triac
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
mb
≤ 108 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
60
50
40
12
30
8
20
10
0
10
- 2
4
2
Conditions
Min
-
-
-
-
-
-
-
-
Max
800
16
160
176
128
100
4
5
1
150
150
003aab820
Unit
V
A
A
A
2
I t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t
p
= 10 ms; SIN
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
A s
A/µs
A
W
W
°C
°C
over any 20 ms period
-
-40
-
003aab819
I
T(RMS)
(A)
20
I
T(RMS)
(A)
16
10
- 1
1
10
surge duration (s)
0
- 50
0
50
100
150
T
mb
(°C)
f = 50 Hz; T
mb
= 108 °C
Fig. 1.
RMS on-state current as a function of surge
duration; maximum values
Fig. 2.
RMS on-state current as a function of mounting
base temperature; maximum values
BTA416Y-800B
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
10 June 2014
3 / 13
NXP Semiconductors
BTA416Y-800B
3Q Hi-Com Triac
P
tot
(W)
20
003aab816
16
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
α = 180°
120°
90°
60°
30°
12
8
4
0
0
2
4
6
8
10
12
14
16 I
18
T(RMS)
(A)
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
I
TSM
(A)
Total power dissipation as a function of RMS on-state current; maximum values
003aab817
180
150
120
90
60
30
0
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
1
10
10
2
n (number of cycles)
10
3
f = 50 Hz
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA416Y-800B
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
10 June 2014
4 / 13
NXP Semiconductors
BTA416Y-800B
3Q Hi-Com Triac
10
3
I
TSM
(A)
(1)
003aab818
10
2
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 5.
Non-repetitive peak on-state current as a function of pulse duration; maximum values
BTA416Y-800B
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
10 June 2014
5 / 13
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