Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Low thermal resistance
BYV29 series
SYMBOL
QUICK REFERENCE DATA
V
R
= 300 V/ 400 V/ 500 V
k
1
a
2
V
F
≤
1.03 V
I
F(AV)
= 9 A
t
rr
≤
60 ns
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYV29 series is supplied in the
conventional
leaded
SOD59
(TO220AC) package.
PINNING
PIN
1
2
tab
DESCRIPTION
cathode
anode
cathode
SOD59 (TO220AC)
tab
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
PARAMETER
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
square wave;
δ
= 0.5;
T
mb
≤
123 ˚C
Repetitive peak forward current t = 25
µs; δ
= 0.5;
T
mb
≤
123 ˚C
Non-repetitive peak forward
t = 10 ms
current.
t = 8.3 ms
sinusoidal; with reapplied
V
RRM(max)
Storage temperature
Operating junction temperature
Average forward current
1
CONDITIONS
BYV29
-
-
-
-
-
-
-
-40
-
MIN.
-300
300
300
300
MAX.
-400
400
400
400
9
18
100
110
150
150
-500
500
500
500
UNIT
V
V
V
A
A
A
A
˚C
˚C
T
stg
T
j
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
in free air.
-
TYP.
-
60
MAX.
2.5
-
UNIT
K/W
K/W
1
Neglecting switching and reverse current losses.
September 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
Q
s
t
rr
I
rrm
V
fr
PARAMETER
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Peak reverse recovery current
Forward recovery voltage
CONDITIONS
I
F
= 8 A; T
j
= 150˚C
I
F
= 8 A
I
F
= 20 A
V
R
= V
RRM
V
R
= V
RRM
; T
j
= 100 ˚C
I
F
= 2 A to V
R
≥
30 V;
dI
F
/dt = 20 A/µs
I
F
= 1 A to V
R
≥
30 V;
dI
F
/dt = 100 A/µs
I
F
= 10 A to V
R
≥
30 V;
dI
F
/dt = 50 A/µs; T
j
= 100˚C
I
F
= 10 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
-
-
-
-
-
BYV29 series
TYP.
0.90
1.05
1.20
2.0
0.1
40
50
4.0
2.5
MAX.
1.03
1.25
1.40
50
0.35
60
60
5.5
-
UNIT
V
V
V
µA
mA
nC
ns
A
V
I
dI
F
dt
F
15
PF / W
Vo = 0.8900 V
Rs = 0.0190 Ohms
BYV29
Tmb(max) / C
D = 1.0
112.5
t
0.5
rr
time
10
0.2
0.1
5
t
p
T
t
125
Q
I
R
I
s
10%
100%
I
t
p
137.5
D=
rrm
T
0
0
5
IF(AV) / A
10
150
15
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
);
square wave where I
F(AV)
=I
F(RMS)
x
√
D.
BYV29
Tmb(max) / C
120
a = 1.57
1.9
2.2
8
2.8
4
6
4
135
140
145
150
10
130
125
I
F
12
10
PF / W
Vo = 0.89V
Rs = 0.019 Ohms
time
VF
V
VF
time
fr
2
0
0
2
4
IF(AV) / A
6
8
Fig.2. Definition of V
fr
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
September 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29 series
1000
trr / ns
30
IF / A
Tj=150 C
BYW29
IF=10 A
100
1A
20
Tj=25 C
typ
max
10
Tj = 25 C
Tj = 100C
1
1
10
dIF/dt (A/us)
100
10
0
0
0.5
1
VF / V
1.5
2
Fig.5. Maximum t
rr
at T
j
= 25˚C and 100˚C
Fig.7. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Qs / nC
10
Irrm / A
IF=10A
1000
1
IF=1A
100
IF = 10 A
2A
0.1
10
0.01
1
Tj = 25 C
Tj = 100C
10
-dIF/dt (A/us)
100
1
1.0
10
-dIF/dt (A/us)
100
Fig.6. Maximum I
rrm
at T
j
= 25˚C and 100˚C.
Fig.8. Maximum Q
s
at T
j
= 25˚C
10
Transient thermal impedance, Zth j-mb (K/W)
1
0.1
0.01
P
D
t
p
D=
t
p
T
t
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYV29
10s
Fig.9. Transient thermal impedance Z
th j-mb
= f(t
p
)
September 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
BYV29 series
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
3,0 max
not tinned
3,0
15,8
max
13,5
min
1,3
max
1
(2x)
2
0,9 max (2x)
0,6
2,4
5,08
Fig.10. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
DEFINITIONS
Data sheet status
Objective specification
Product specification
Limiting values
BYV29 series
This data sheet contains target or goal specifications for product development.
This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
©
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1998
5
Rev 1.300
MCU
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