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ZXTP2012ASTZ

Description
transistors bipolar - bjt pnp 60v 3.5A 3-pin
Categorysemiconductor    Discrete semiconductor   
File Size111KB,6 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Environmental Compliance  
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ZXTP2012ASTZ Overview

transistors bipolar - bjt pnp 60v 3.5A 3-pin

ZXTP2012ASTZ Parametric

Parameter NameAttribute value
ManufactureDiodes Incorporated
Product CategoryTransistors Bipolar - BJT
RoHSYes
ConfiguratiSingle
Transistor PolarityPNP
Collector- Base Voltage VCBO100 V
Collector- Emitter Voltage VCEO Max60 V
Emitter- Base Voltage VEBO7 V
Maximum DC Collector Curre3.5 A
Gain Bandwidth Product fT120 MHz
Maximum Operating Temperature+ 150 C
Mounting StyleThrough Hole
Package / CaseE-Line
DC Collector/Base Gain hfe Mi100
DC Current Gain hFE Max100 at 10 mA at 1 V
Maximum Power Dissipati1000 mW
Minimum Operating Temperature- 55 C
Factory Pack Quantity2000
ZXTP2012A
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE
SUMMARY
BV
CEO
= -60V : R
SAT
= 38m ; I
C
= -3.5A
DESCRIPTION
Packaged in the E-line outline this new low saturation 60V PNP transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
3.5 amps continuous current
Up to 15 amps peak current
Very low saturation voltages
Excellent gain up to 10 amps
E-line
APPLICATIONS
DC - DC converters
MOSFET gate drivers
Power switches
Motor control
ORDERING INFORMATION
DEVICE
ZXTP2012ASTOA
ZXTP2012ASTZ
QUANTITY PER REEL
2,000 units / reel
2,000 units / carton
PINOUT
DEVICE MARKING
ZXT
P20
12
TOP VIEW
ISSUE 2 - NOVEMBER 2005
1
SEMICONDUCTORS

ZXTP2012ASTZ Related Products

ZXTP2012ASTZ ZXTP2012A
Description transistors bipolar - bjt pnp 60v 3.5A 3-pin transistors bipolar - bjt 60v pnp low sat
Manufacture Diodes Incorporated Diodes Incorporated
Product Category Transistors Bipolar - BJT Transistors Bipolar - BJT
RoHS Yes Yes
Configurati Single Single
Transistor Polarity PNP PNP
Collector- Base Voltage VCBO 100 V - 100 V
Collector- Emitter Voltage VCEO Max 60 V - 60 V
Emitter- Base Voltage VEBO 7 V 7 V
Maximum DC Collector Curre 3.5 A 3.5 A
Gain Bandwidth Product fT 120 MHz 120 MHz
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Through Hole Through Hole
Package / Case E-Line E-Line
DC Collector/Base Gain hfe Mi 100 100 at 10 mA at 1 V, 100 at 1 A at 1 V, 65 at 4 A at 1 V, 10 at 10 A at 1 V
DC Current Gain hFE Max 100 at 10 mA at 1 V 100 at 10 mA at 1 V
Maximum Power Dissipati 1000 mW 1000 mW
Minimum Operating Temperature - 55 C - 55 C
Factory Pack Quantity 2000 4000
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