CREAT BY ART
MBRS10H100CT - MBRS10H200CT
10.0AMPS Surface Mount Schottky Barrier Rectifiers
D
2
PAK
Features
UL Recognized File # E-326854
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guard-ring for overvoltage protection
High temperature soldering guaranteed:
260℃/10 seconds/.25", (6.35mm) from case
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Case: D
2
PAK molded plastic body
Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position:Any
Mounting torque: 5 in. - lbs, max
Weight: 1.41 grams
Ordering Information
Part No.
MBRS10HxxCT
Package
D2PAK
Packing
800 / 13" REEL
Packing
code
RN
Green Compound
Packing code
RNG
Note: "x" is Device Code from "100" thru "200".
Maximum Ratings and Electrical Characteristics
Rating at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Repetitive Surge Current (Rated V
R
, Square
Wave, 20KHz)
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC Method)
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage (Note 2)
IF=5A, T
A
=25℃
IF=5A, T
A
=125℃
IF=10A, T
A
=25℃
IF=10A, T
A
=125℃
Maximum Reverse Current @ Rated V
R
Voltage Rate of Change,(Rated V
R
)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
T
A
=25
℃
T
A
=125
℃
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
MBRS
10H100CT
100
70
100
MBRS
10H150CT
150
105
150
10
10
120
1
MBRS
10H200CT
200
140
200
Unit
V
V
V
A
A
A
0.5
0.88
0.75
0.97
0.85
5
1
10000
3.5
- 65 to + 175
- 65 to + 175
O
A
0.85
V
F
0.75
0.95
0.85
I
R
dV/dt
R
θjC
T
J
T
STG
V
uA
mA
V/us
C/W
O
O
C
C
Version:F12
RATINGS AND CHARACTERISTIC CURVES (MBRS10H100CT THRU MBRS10H200CT)
FIG.1 FORWARD CURRENT DERATING CURVE
12
AVERAGE FORWARD
A
CURRENT (A)
10
8
6
4
2
0
50 60 70 80 90 100 110 120 130 140 150 160 170 180
CASE TEMPERATURE (
o
C)
RESISTIVE OR
INDUCTIVELOA
PEAK FORWARD SURGE CURRENT (A)
180
150
120
90
60
30
0
1
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3mS Single Half Sine Wave
JEDEC Method
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3 TYPICAL FORWARD CHARACTERISRICS
100
INSTANTANEOUS FORWARD
A
CURRENT (A)
INSTANTANEOUS REVERSE
A
CURRENT (mA)
TA=125℃
10
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
1
TA=125
10
0.1
TA=75
1
TA=25
0.01
TA=25℃
PULSE WIDTH=300uS
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
0.001
TA=25
0.1
FORWARD VOLTAGE (V)
0.0001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE (pF)
A
900
800
700
600
500
400
300
200
100
0.1
1
10
100
REVERSE VOLTAGE (V)
0.1
TRANSIENT THERMAL
IMPEDANCE(℃/W)
10
100
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
1
0.01
0.1
1
10
100
T-PULSE DURATION(s)
Version:F12
京公网安备 11010802033920号
EEWORLD
