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CEDM8001 TR

Description
mosfet P-channel mosfet 20v 100ma
Categorysemiconductor    Discrete semiconductor   
File Size812KB,4 Pages
ManufacturerCentral Semiconductor
Environmental Compliance  
Download Datasheet Parametric View All

CEDM8001 TR Overview

mosfet P-channel mosfet 20v 100ma

CEDM8001 TR Parametric

Parameter NameAttribute value
ManufactureCentral Semiconduc
Product CategoryMOSFET
RoHSYes
Transistor PolarityP-Channel
Vds - Drain-Source Breakdown Voltage- 20 V
Id - Continuous Drain Curre100 mA
PackagingReel
Factory Pack Quantity8000
CEDM8001
SURFACE MOUNT SILICON
P-CHANNEL
ENHANCEMENT-MODE
MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CEDM8001 is
a P-Channel Enhancement-mode silicon MOSFET,
manufactured by the P-Channel DMOS Process,
designed for high speed pulsed amplifier and driver
applications. This MOSFET offers low rDS(ON) and low
theshold voltage.
MARKING CODE: F
COMPLEMENTARY N-CHANNEL: CEDM7001
SOT-883L CASE
APPLICATIONS:
• Load/Power switches
• DC - DC converters
• Battery powered portable equipment
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current
Power Dissipation
Operating and Storage Junction Temperature
FEATURES:
• 100mW Power Dissipation
• 0.4mm low package profile
• Low rDS(ON)
• Low threshold voltage
• Logic level compatible
• Small leadless surface mount package
SYMBOL
VDS
VGS
ID
ID
PD
TJ, Tstg
20
10
100
200
100
-65 to +150
UNITS
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=10V, VDS=0
IDSS
BVDSS
VGS(th)
rDS(ON)
rDS(ON)
rDS(ON)
gFS
Crss
Ciss
Coss
Qg(tot)
Qgs
Qgd
ton
toff
VDS=20V, VGS=0
VGS=0, ID=100μA
VDS=VGS, ID=250μA
VGS=4.0V, ID=10mA
VGS=2.5V, ID=10mA
VGS=1.5V, ID=1.0mA
VDS=10V, ID=100mA
VDS=3.0V, VGS=0, f=1.0MHz
VDS=3.0V, VGS=0, f=1.0MHz
VDS=3.0V, VGS=0, f=1.0MHz
VDS=10V, VGS=4.5V, ID=100mA
VDS=10V, VGS=4.5V, ID=100mA
VDS=10V, VGS=4.5V, ID=100mA
VDD=3.0V, VGS=2.5V, ID=10mA
VDD=3.0V, VGS=2.5V, ID=10mA
100
15
45
15
0.658
0.158
0.181
35
80
20
0.6
1.9
2.4
MAX
1.0
1.0
1.1
8.0
12
45
UNITS
μA
μA
V
V
Ω
Ω
Ω
mS
pF
pF
pF
nC
nC
nC
ns
ns
R8 (19-September 2014)

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