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CTLDM3590 TR

Description
mosfet smd Sm signal mosfet N-channel enh mode
Categorysemiconductor    Discrete semiconductor   
File Size1MB,5 Pages
ManufacturerCentral Semiconductor
Environmental Compliance  
Download Datasheet Parametric View All

CTLDM3590 TR Overview

mosfet smd Sm signal mosfet N-channel enh mode

CTLDM3590 TR Parametric

Parameter NameAttribute value
ManufactureCentral Semiconduc
Product CategoryMOSFET
RoHSYes
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage20 V
Vgs - Gate-Source Breakdown Voltage8 V
Id - Continuous Drain Curre160 mA
Rds On - Drain-Source Resistance3 Ohms
Qg - Gate Charge0.458 nC
Maximum Operating Temperature+ 150 C
Pd - Power Dissipati125 mW
Mounting StyleSMD/SMT
Package / CaseTLM3D6D8
PackagingReel
Channel ModeEnhanceme
Forward Transconductance - Mi1.3 S
Minimum Operating Temperature- 65 C
Factory Pack Quantity10000
CTLDM3590
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLDM3590 is
an enhancement-mode N-channel MOSFET designed
for applications including high speed pulsed amplifiers
and drivers. This MOSFET has beneficially low
rDS(ON), low threshold voltage, and very low gate
charge characteristics.
MARKING CODE: 1
TLM3D6D8 CASE
APPLICATIONS:
• Load/Power Switches
• Boost/Buck Converters
• Battery Charging/Power Management
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
• ESD protection up to 2kV
• Power dissipation: 125mW
• Low rDS(ON)
• Low threshold voltage
• Ultra small, ultra low profile 0.6mm x 0.8mm x 0.4mm
TLM
TM
leadless surface mount package
SYMBOL
VDS
VGS
ID
ID
PD
TJ, Tstg
Θ
JA
20
8.0
160
800
125
-65 to +150
1000
UNITS
V
V
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless
SYMBOL
TEST CONDITIONS
IGSSF, IGSSR VGS=5.0V, VDS=0
IDSS
VDS=5.0V, VGS=0
IDSS
VDS=16V, VGS=0
BVDSS
VGS=0, ID=250μA
VGS(th)
VDS=VGS, ID=250μA
rDS(ON)
VGS=4.5V, ID=100mA
rDS(ON)
VGS=2.5V, ID=50mA
rDS(ON)
VGS=1.8V, ID=20mA
rDS(ON)
VGS=1.5V, ID=10mA
rDS(ON)
VGS=1.2V, ID=1.0mA
Qg(tot)
VDS=10V, VGS=4.5V, ID=100mA
Qgs
VDS=10V, VGS=4.5V, ID=100mA
Qgd
VDS=10V, VGS=4.5V, ID=100mA
gFS
VDS=5.0V, ID=125mA
Crss
VDS=15V, VGS=0, f=1.0MHz
Ciss
VDS=15V, VGS=0, f=1.0MHz
Coss
VDS=15V, VGS=0, f=1.0MHz
ton
VDD=10V, VGS=4.5V, ID=200mA
toff
VDD=10V, VGS=4.5V, ID=200mA
otherwise noted)
MIN
TYP
MAX
100
50
100
1.0
3.0
4.0
6.0
10
20
0.4
1.5
2.0
3.0
4.0
7.0
0.458
0.176
0.138
1.3
2.2
9.0
3.0
25
85
UNITS
nA
nA
nA
V
V
Ω
Ω
Ω
Ω
Ω
nC
nC
nC
S
pF
pF
pF
ns
ns
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