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BF 2030W H6824

Description
transistors RF mosfet RF mosfetS
Categorysemiconductor    Discrete semiconductor   
File Size114KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BF 2030W H6824 Overview

transistors RF mosfet RF mosfetS

BF 2030W H6824 Parametric

Parameter NameAttribute value
ManufactureInfine
Product CategoryTransistors RF MOSFET
RoHSYes
ConfiguratiSingle
Transistor PolarityN-Channel
Frequency1 GHz
Gai23 dB
Vds - Drain-Source Breakdown Voltage10 V
Id - Continuous Drain Curre40 mA
Vgs - Gate-Source Breakdown Voltage6 V
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-343
PackagingReel
Pd - Power Dissipati200 mW
Factory Pack Quantity10000
BF2030...
Silicon N-Channel MOSFET Tetrode
For low noise, high gain controlled
input stages up to 1GHz
Operating voltage 5V
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
Drain
AGC
RF
Input RG1
VGG
G2
G1
RF Output
+ DC
GND
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Class 2 (2000V - 4000V) pin to pin
Human Body Model
Type
BF2030
BF2030R
BF2030W
Package
SOT143
SOT143R
SOT343
1= S
1= D
1= D
2=D
2=S
2=S
Pin Configuration
3=G2
3=G1
3=G1
4=G1
4=G2
4=G2
-
-
-
-
-
-
Marking
NDs
NDs
NDs
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
T
S
76 °C, BF2030, BF2030R
T
S
94 °C, BF2030W
Storage temperature
Channel temperature
1
Pb-containing
Symbol
V
DS
I
D
±I
G1/2SM
+V
G1SE
P
tot
Value
8
40
10
6
200
200
Unit
V
mA
V
mW
T
stg
T
ch
-55 ... 150
150
°C
package may be available upon special request
1
2007-04-20

BF 2030W H6824 Related Products

BF 2030W H6824 BF 2030 E6814
Description transistors RF mosfet RF mosfetS transistors RF mosfet silicon N channel mosfet tetrode
Manufacture Infine Infine
Product Category Transistors RF MOSFET Transistors RF MOSFET
RoHS Yes Yes
Configurati Single Single Dual Gate
Transistor Polarity N-Channel N-Channel
Vds - Drain-Source Breakdown Voltage 10 V 8 V
Id - Continuous Drain Curre 40 mA 0.04 A
Vgs - Gate-Source Breakdown Voltage 6 V 6 V
Maximum Operating Temperature + 150 C + 150 C
Mounting Style SMD/SMT SMD/SMT
Package / Case SOT-343 SOT-143
Packaging Reel Reel
Pd - Power Dissipati 200 mW 200 mW
Factory Pack Quantity 10000 3000
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