RN2401S,LF(D datasheet, PDF - EEWORLD Datasheet

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RN2401S,LF(D: Descriptiontransistors switching - resistor biased bias resistor built- in transistor (brt); CategoryDiscrete semiconductor The transistor; File Size903KB，8 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN2401S,LF(D Overview

transistors switching - resistor biased bias resistor built- in transistor (brt)

RN2401S,LF(D Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow
Factory Lead Time	16 weeks
Other features	BUILT IN BIAS RESISTANCE RATIO IS 1
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	30
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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RN2401~RN2406

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2401, RN2402, RN2403

RN2404, RN2405, RN2406

Unit: mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

With built-in bias resistors

Simplified circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN1401 to 1406

Equivalent Circuit Bias Resistor Values

Type No.

RN2401

RN2402

RN2403

RN2404

RN2405

RN2406

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

JEDEC

TO-236MOD

JEITA

SC-59

TOSHIBA

2-3F1A

Weight:12mg (typ.)

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2401 to 2406

RN2401 to 2404

RN2405, 2406

Symbol

CBO

CEO

EBO

stg

Rating

−50

−10

−5

−100

200

150

−55

to 150

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

1983-06

2014-03-01

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