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BF 5020W H6327

Description
transistors RF mosfet RF mosfetS
Categorysemiconductor    Discrete semiconductor   
File Size564KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BF 5020W H6327 Overview

transistors RF mosfet RF mosfetS

BF 5020W H6327 Parametric

Parameter NameAttribute value
ManufactureInfine
Product CategoryTransistors RF MOSFET
RoHSYes
ConfiguratiSingle
Transistor PolarityN-Channel
Frequency800 MHz
Gai26 dB
Vds - Drain-Source Breakdown Voltage12 V
Id - Continuous Drain Curre25 mA
Vgs - Gate-Source Breakdown Voltage6 V
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-343
PackagingReel
Pd - Power Dissipati200 mW
Factory Pack Quantity3000
BF5020...
Silicon N-Channel MOSFET Tetrode
Low noise gain controlled input stages of UHF- and
VHF - tuners with 3 V up to 5 V supply voltage
Integrated gate protection diodes
Excellent noise figure
High gain, high forward transadmittance
Improved cross modulation at gain reduction
Pb-free (RoHS compliant) package
Qualified according AEC Q101
3
4
1
2
Drain
AGC
HF
Input
G2
G1
R
G1
V
GG
HF Output
+ DC
GND
EHA07461
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BF5020
BF5020R
BF5020W
Package
SOT143
SOT143R
SOT343
1=S
1=D
1=D
2=D
2=S
2=S
Pin Configuration
3 = G2 4 = G1 -
3 = G1 4 = G2 -
3 = G1 4 = G2 -
-
-
-
Marking
KYs
KYs
KYs
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
T
S
76 °C, BF5020, BF5020R
T
S
94 °C, BF5020W
Storage temperature
Channel temperature
T
stg
T
ch
Symbol
V
DS
I
D
I
G1S
,
I
G2S
V
G1S
,
V
G2S
P
tot
200
200
-55 ... 150
150
°C
Value
8
25
±
10
±
6
Unit
V
mA
mA
V
mW
1
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