BLF6G10-135RN;
BLF6G10LS-135RN
Power LDMOS transistor
Rev. 02 — 21 January 2010
Product data sheet
1. Product profile
1.1 General description
135 W LDMOS power transistor for base station applications at frequencies from
700 MHz to 1000 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C in a class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
869 to 894
V
DS
(V)
28
P
L(AV)
(W)
26.5
G
p
(dB)
21.0
η
D
(%)
28.0
ACPR
(dBc)
−39
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a
supply voltage of 28 V and an I
Dq
of 950 mA:
Average output power = 26.5 W
Power gain = 21.0 dB
Efficiency = 28.0 %
ACPR =
−39
dBc
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (700 MHz to 1000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
NXP Semiconductors
BLF6G10(LS)-135RN
Power LDMOS transistor
1.3 Applications
RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 700 MHz to 1000 MHz frequency range
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLF6G10-135RN (SOT502A)
1
1
3
2
2
3
sym112
BLF6G10LS-135RN (SOT502B)
1
2
3
drain
gate
source
[1]
1
3
2
2
1
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF6G10-135RN
BLF6G10LS-135RN
-
-
Version
flanged LDMOST ceramic package; 2 mounting holes; SOT502A
2 leads
earless flanged LDMOST ceramic package; 2 leads
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
−0.5
-
−65
-
Max
65
+13
32
+150
225
Unit
V
V
A
°C
°C
BLF6G10-135RN_10LS-135RN_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 21 January 2010
2 of 11
NXP Semiconductors
BLF6G10(LS)-135RN
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
Thermal characteristics
Parameter
Conditions
Type
BLF6G10-135RN
Typ
Unit
0.68 K/W
R
th(j-case)
thermal resistance from T
case
= 80
°C;
P
L
= 25 W
junction to case
BLF6G10LS-135RN 0.56 K/W
6. Characteristics
Table 6.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
Parameter
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
feedback capacitance
Conditions
V
GS
= 0 V; I
D
= 0.8 mA
V
DS
= 10 V; I
D
= 180 mA
V
DS
= 28 V; I
D
= 950 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 9 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 6.3 A
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
Min Typ Max Unit
65
1.4
1.6
-
24
-
7
-
-
-
1.9
2.1
-
32
-
13
0.1
2.0
-
2.4
2.6
3
-
300
-
-
-
V
V
V
μA
A
nA
S
Ω
pF
V
(BR)DSS
drain-source breakdown voltage
7. Application information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
1
= 871.5 MHz; f
2
= 876.5 MHz; f
3
= 886.5 MHz; f
4
= 891.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 950 mA; T
case
= 25
°
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol
P
L(AV)
G
p
RL
in
η
D
ACPR
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
P
L(AV)
= 26.5 W
P
L(AV)
= 26.5 W
P
L(AV)
= 26.5 W
P
L(AV)
= 26.5 W
Conditions
Min
-
20.0
-
26.0
-
Typ
26.5
21.0
−10.0
28.0
−39
Max
-
-
−6.5
-
−36.5
Unit
W
dB
dB
%
dBc
7.1 Ruggedness in class-AB operation
The BLF6G10-135RN and BLF6G10LS-135RN are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 28 V; I
Dq
= 950 mA; P
L
= 135 W; f = 894 MHz.
BLF6G10-135RN_10LS-135RN_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 21 January 2010
3 of 11
NXP Semiconductors
BLF6G10(LS)-135RN
Power LDMOS transistor
24
G
p
(dB)
23
001aah864
75
η
D
(%)
60
22
G
p
45
21
η
D
20
30
15
19
0
40
80
120
P
L
(W)
0
160
V
DS
= 28 V; I
Dq
= 950 mA; f = 881 MHz.
Fig 1.
One-tone CW power gain and drain efficiency as function of load power;
typical values
23
G
p
(dB)
22
G
p
001aah865
60
η
D
(%)
45
−20
IMD
(dBc)
−30
001aah866
IMD3
IMD5
21
30
−40
IMD7
η
D
20
15
−50
19
0
25
50
0
75
100
P
L(PEP)
(W)
−60
0
25
50
75
100
P
L(PEP)
(W)
V
DS
= 28 V; I
Dq
= 950 mA; f
1
= 881 MHz (±100 kHz).
V
DS
= 28 V; I
Dq
= 950 mA; f
1
= 881 MHz (±100 kHz).
Fig 2.
Two-tone CW power gain and drain efficiency
as function of peak envelope load power;
typical values
Fig 3.
Two-tone CW intermodulation distortion as a
function of peak envelope load power;
typical values
BLF6G10-135RN_10LS-135RN_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 21 January 2010
4 of 11
NXP Semiconductors
BLF6G10(LS)-135RN
Power LDMOS transistor
24
G
p
(dB)
23
001aah867
50
η
D
(%)
40
−20
ACPR
(dBc)
−30
001aah868
22
G
p
21
η
D
20
30
20
−40
10
19
0
12
24
36
48
60
P
L(AV)
(W)
0
−50
0
20
40
P
L(AV)
(W)
60
V
DS
= 28 V; I
Dq
= 950 mA; f
1
= 881 MHz; f
2
= 886 MHz;
carrier spacing 5 MHz.
V
DS
= 28 V; I
Dq
= 950 mA; f
1
= 881 MHz; f
2
= 886 MHz;
carrier spacing 5 MHz.
Fig 4.
2-carrier W-CDMA power gain and drain
efficiency as function of average load power;
typical values
Fig 5.
2-carrier W-CDMA adjacent power channel
ratio as a function of average load power;
typical values
8. Test information
V
GG
C3
C8
C9
C10
C11
C18
R3
L1
C20
V
DD
R1
C4
R2
C6
input
50
Ω
C1
C17
output
50
Ω
C2
C7
C5
C16
C12
C13
C14
C15
C19
001aah869
The drawing is not to scale.
Fig 6.
Test circuit for operation at 800 MHz
BLF6G10-135RN_10LS-135RN_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 21 January 2010
5 of 11
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