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1N5626 BK

Description
rectifiers 600v 3.0A
Categorysemiconductor    Discrete semiconductor   
File Size286KB,2 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

1N5626 BK Overview

rectifiers 600v 3.0A

1N5626 BK Parametric

Parameter NameAttribute value
ManufactureCentral Semiconduc
Product CategoryRectifiers
RoHSIn Transiti
ProducStandard Recovery Rectifiers
ConfiguratiSingle
Reverse Voltage600 V
Forward Voltage D1 V at 3 A
Forward Continuous Curre5 A
Max Surge Curre125 A
Reverse Current IR5 uA
Mounting StyleThrough Hole
Package / CaseGPR-3A
PackagingBulk
Maximum Operating Temperature+ 200 C
Minimum Operating Temperature- 65 C
Factory Pack Quantity500
1N5624
1N5625
1N5626
1N5627
w w w. c e n t r a l s e m i . c o m
SILICON
GLASS PASSIVATED RECTIFIERS
5.0 AMP, 200 THRU 800 VOLT
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N5624 series
types are silicon rectifiers mounted in a hermetically
sealed, glass passivated package, designed for general
purpose applications where high reliablility is required.
MARKING: FULL PART NUMBER
GPR-4AM CASE
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL 1N5624 1N5625 1N5626 1N5627 UNITS
Peak Repetitive Reverse Voltage
VRRM
200
400
600
800
V
DC Blocking Voltage
VR
200
400
600
800
V
RMS Reverse Voltage
VR(RMS)
140
280
420
560
V
Average Forward Current (TA=75°C)
IO
3.0
A
Average Forward Current
Peak Forward Surge Current, tp=8.3ms
Operating and Storage Junction Temperature
IO
IFSM
TJ, Tstg
5.0
100
-65 to +200
A
A
°C
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IR
VR=Rated VRRM
VF
IF=3.0A
MAX
5.0
1.0
UNITS
μA
V
R1 (9-April 2013)

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