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BSC105N10LSF G

Description
mosfet optimos2 pwr transistor N-CH
Categorysemiconductor    Discrete semiconductor   
File Size656KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BSC105N10LSF G Overview

mosfet optimos2 pwr transistor N-CH

BSC105N10LSF G Parametric

Parameter NameAttribute value
ManufactureInfine
Product CategoryMOSFET
RoHSYes
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage100 V
Vgs - Gate-Source Breakdown Voltage20 V
Id - Continuous Drain Curre90 A
Rds On - Drain-Source Resistance10.5 mOhms
ConfiguratiSingle Quad Drain Triple Source
Maximum Operating Temperature+ 150 C
Pd - Power Dissipati156 W
Mounting StyleSMD/SMT
Package / CaseTDSON-8
PackagingReel
Channel ModeEnhanceme
Fall Time8 ns
Minimum Operating Temperature- 55 C
Rise Time26 ns
Factory Pack Quantity5000
Typical Turn-Off Delay Time37 ns
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