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SMDJ10.0CA-HR

Description
tvs diodes - transient voltage suppressors 10v 3000w 5% tol high rel Bi
Categorysemiconductor    Discrete semiconductor   
File Size1MB,6 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
Download Datasheet Parametric View All

SMDJ10.0CA-HR Overview

tvs diodes - transient voltage suppressors 10v 3000w 5% tol high rel Bi

SMDJ10.0CA-HR Parametric

Parameter NameAttribute value
ManufactureLittelfuse
Product CategoryTVS Diodes - Transient Voltage Suppressors
RoHSYes
PolarityBidirectional
Operating Voltage10 V
Breakdown Voltage12.3 V
Clamping Voltage17 V
Peak Surge Curre176.5 A
Package / CaseDO-214AB-2
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
PackagingReel
Peak Pulse Power Dissipati3 kW
Factory Pack Quantity500
Termination StyleSMD/SMT
Surface Mount – 3000W > SMDJ-HR series
Transient Voltage Suppression Diodes
SMDJ-HR Series
Uni-directional
RoHS
TVS Diode Arrays
(SPA
Family of Products)
Bi-directional
Description
The SMDJ-HR High Reliability series is designed
specifically to protect sensitive electronic equipment from
voltage transients induced by lightning and other transient
voltage events.
Features
• Low incremental surge
resistance
• Typical I
R
less than 2µA
above 12V
• High temperature
soldering guaranteed:
260°C/40 seconds at
x (T
J
- 25))
terminals
(αT:Temperature Coefficient)
• Plastic package has
• Glass passivated chip
underwriters laboratory
junction
flammability 94V-O
• 3000W peak pulse power
• eet MSL level1, per
M
capability at 10/1000μs
J-STD-020, LF maximun
waveform, repetition rate
peak of 260
°
C
(duty cycles):0.01%
• Matte tin lead–free plated
• Fast response time:
• Halogen free and RoHS
typically less than 1.0ps
from 0V to BV min
compliant
• Excellent clamping
capability
• For surface mounted
applications in order to
optimize board space
• Low profile package
• Built-in strain relief
V
BR
@T
J
= V
BR
@25°C x (1+αT
Applications
TVS devices are ideal for the protection of I/O Interfaces,
V
CC
bus and other vulnerable circuits used in Telecom,
Computer, Industrial and Consumer electronic applications.
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E230531
Maximum Ratings and Thermal Characteristics
(T
A
=25
O
C unless otherwise noted)
Parameter
Peak Pulse Power Dissipation at
T
A
=25ºC by 10/1000µs waveform
(Fig.1)(Note 1), (Note 2)
Power Dissipation on infinite heat
sink at T
A
=50
O
C
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave (Note 3)
Maximum Instantaneous Forward
Voltage at 100A for Unidirectional
only
Operating Junction and Storage
Temperature Range
Typical Thermal Resistance Junction
to Lead
Typical Thermal Resistance Junction
to Ambient
Symbol
P
PPM
P
M(AV)
I
FSM
V
F
T
J
, T
STG
R
uJL
R
uJA
Value
3000
6.5
300
3.5
-55 to 150
15
75
Unit
W
W
A
V
°C
°C/W
°C/W
Notes:
1. Non-repetitive current pulse , per Fig. 3 and derated above T
A
= 25
O
C per Fig. 2.
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional
device only, duty cycle=4 per minute maximum.
Functional Diagram
Bi-directional
Cathode
Uni-directional
Anode
SMDJ-HR Series
1
55
©2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/18/13

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