ZXMP6A16DN8Q
DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
Max
85mΩ @ V
GS
= -10V
-60V
125mΩ @ V
GS
= -4.5V
-3.2A
I
D
T
A
= +25°C
(Notes 4 & 6)
-3.9A
Features
Low On-Resistance
Fast Switching Speed
Low Threshold
Low Gate Drive
Low Profile SOIC Package
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Available
Description
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish; Solderable per MIL-STD-202, Method
208
e3
Weight: 0.074 grams (approximate)
Applications
DC-DC Converters
Power Management Functions
Disconnect Switches
Motor Control
SO-8
S1
G1
S2
G2
D1
D1
D2
D2
Top View
D1
D2
G1
S1
G2
S2
Equivalent Circuit
Top View
Ordering Information
Part Number
ZXMP6A16DN8QTA
Notes:
Qualification
Automotive
Case
SO-8
Packaging
500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
ZXMP
6A16D
YY WW
1
4
ZXMP6A16D = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 11 = 2011)
WW = Week (01 - 53)
ZXMP6A16DN8Q
Document number: DS36687 Rev. 2 - 2
1 of 8
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December 2013
© Diodes Incorporated
ZXMP6A16DN8Q
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
Pulsed Drain current
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
V
GS
= 10V
(Note 6)
(Notes 8 & 10)
T
A
= +70°C (Notes 8 & 10)
(Notes 7 & 10)
(Notes 9 & 10)
(Notes 8 & 10)
(Notes 9 & 10)
Symbol
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
Value
-60
20
-3.9
-3.1
-2.9
-18.3
-3.2
-18.3
Unit
V
V
A
A
A
A
Thermal Characteristics
Characteristic
(Notes 7 & 10)
Power dissipation
Linear derating factor
(Notes 7 & 11)
(Notes 8 & 10)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
Symbol
P
D
(Notes 7 & 10)
(Notes 7 & 11)
(Notes 8 & 10)
(Notes 10 & 12)
R
θJA
R
θJL
T
J
, T
STG
Value
1.25
10.0
1.81
14.5
2.15
17
100
70
60
48.85
-55 to +150
Unit
W
mW/°C
°C/W
°C
6. AEC-Q101 V
GS
maximum is
16V.
7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
8. Same as note (7), except the device is measured at t
10 sec.
9. Same as note (7), except the device is pulsed with D = 0.02 and pulse width 300µs.
10. For a dual device with one active die.
11. For a device with two active die running at equal power.
12. Thermal resistance from junction to solder-point.
ZXMP6A16DN8Q
Document number: DS36687 Rev. 2 - 2
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December 2013
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ZXMP6A16DN8Q
Thermal Characteristics
-I
D
Drain Current (A)
Limited
Max Power Dissipation (W)
10
R
DS(on)
1
DC
1s
100ms
10ms
1ms
100µs
100m
10m
100m
Single Pulse
T
amb
=25°C
One active die
-V
DS
Drain-Source Voltage (V)
1
10
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Two active die
One active die
0
20
40
Temperature (°C)
60
80
100 120 140 160
Safe Operating Area
Derating Curve
Thermal Resistance (°C/W)
110
T
amb
=25°C
100
One active die
90
80
70
D=0.5
60
50
40
Single Pulse
D=0.2
30
20
D=0.05
10
D=0.1
0
100µ 1m 10m 100m 1
10
100
1k
Maximum Power (W)
100
Single Pulse
T
amb
=25°C
One active die
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Pulse Width (s)
Pulse Power Dissipation
ZXMP6A16DN8Q
Document number: DS36687 Rev. 2 - 2
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ZXMP6A16DN8Q
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 13)
Forward Transconductance (Notes 13 & 14)
Diode Forward Voltage (Note 13)
Reverse recovery time (Note 14)
Reverse recovery charge (Note 14)
DYNAMIC CHARACTERISTICS (Note 14)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 15)
Total Gate Charge (Note 15)
Gate-Source Charge (Note 15)
Gate-Drain Charge (Note 15)
Turn-On Delay Time (Note 15)
Turn-On Rise Time (Note 15)
Turn-Off Delay Time (Note 15)
Turn-Off Fall Time (Note 15)
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
fs
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
-60
-1
Typ
7.2
-0.85
29.2
39.6
1021
83.1
56.4
12.1
24.2
2.5
3.7
3.5
4.1
35
10
Max
-1.0
100
85
125
-0.95
Unit
V
µA
nA
V
mΩ
S
V
ns
nC
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
I
D
= -250µA, V
GS
= 0V
V
DS
= -60V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
I
D
= -250µA, V
DS
= V
GS
V
GS
= -10V, I
D
= -2.9A
V
GS
= -4.5V, I
D
= -2.4A
V
DS
= -15V, I
D
= -2.9A
I
S
= -3.4A, V
GS
= 0V, T
J
= +25°C
I
S
= -2A, di/dt = 100A/µs,
T
J
= +25°C
V
DS
= -30V, V
GS
= 0V,
f = 1MHz
V
GS
= -5V
V
GS
= -10V
V
DS
= -30V,
I
D
= -2.9A
V
DD
= -30V, V
GS
= -10V,
I
D
= -1A, R
G
6Ω
13. Measured under pulsed conditions. Pulse width
300µs; duty cycle
2%
14. For design aid only, not subject to production testing.
15. Switching characteristics are independent of operating junction temperatures.
ZXMP6A16DN8Q
Document number: DS36687 Rev. 2 - 2
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December 2013
© Diodes Incorporated
ZXMP6A16DN8Q
Typical Characteristics
T = 25°C
10V
5V
-I
D
Drain Current (A)
10
-I
D
Drain Current (A)
4.5V
4V
3.5V
3V
T = 150°C
10V
5V
10
4V
3.5V
3V
1
2.5V
-V
GS
1
2.5V
-V
GS
0.1
2V
0.1
0.1
-V
DS
Drain-Source Voltage (V)
1
10
0.01
0.1
-V
DS
Drain-Source Voltage (V)
1
10
Output Characteristics
1.8
Normalised R
DS(on)
and V
GS(th)
10
Output Characteristics
V
GS
= -10V
I
D
= - 2.9A
R
DS(on)
V
GS(th)
V
GS
= V
DS
I
D
= -250uA
-I
D
Drain Current (A)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
1
T = 150°C
T = 25°C
-V
DS
= 10V
0.1
-V
GS
Gate-Source Voltage (V)
2
3
4
50
100
150
Tj Junction Temperature (°C)
Typical Transfer Characteristics
R
DS(on)
Drain-Source On-Resistance
2.5V
-V
GS
3V
3.5V
T = 25°C
Normalised Curves v Temperature
-I
SD
Reverse Drain Current (A)
10
10
T = 150°C
1
4V
4.5V
5V
1
T = 25°C
0.1
0.1
0.1
1
10
10V
0.01
0.4
On-Resistance v Drain Current
-I
D
Drain Current (A)
-V
SD
Source-Drain Voltage (V)
0.6
0.8
1.0
1.2
Source-Drain Diode Forward Voltage
ZXMP6A16DN8Q
Document number: DS36687 Rev. 2 - 2
5 of 8
www.diodes.com
December 2013
© Diodes Incorporated
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