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BYV74W-500

Description
Dual rectifier diodes ultrafast
CategoryDiscrete semiconductor    diode   
File Size39KB,5 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BYV74W-500 Overview

Dual rectifier diodes ultrafast

BYV74W-500 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Codeunknow
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.36 V
JESD-609 codee0
Maximum non-repetitive peak forward current160 A
Maximum operating temperature150 °C
Maximum output current30 A
Maximum repetitive peak reverse voltage500 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Low thermal resistance
BYV74W series
SYMBOL
QUICK REFERENCE DATA
V
R
= 300 V/ 400 V/ 500 V
a1
1
k 2
a2
3
V
F
1.12 V
I
O(AV)
= 30 A
t
rr
60 ns
SOT429 (TO247)
GENERAL DESCRIPTION
Dual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for use as output rectifiers in high
frequency switched mode power
supplies.
The BYV74W series is supplied in
the conventional leaded SOT429
(TO247) package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1
cathode
anode 2
cathode
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
PARAMETER
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current
(both diodes conducting)
1
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode.
Storage temperature
Operating junction temperature
CONDITIONS
BYV74W
T
mb
136˚C
square wave;
δ
= 0.5;
T
mb
94 ˚C
t = 25
µs; δ
= 0.5;
T
mb
94 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RRM(max)
-
-
-
-
-
-
-
-40
-
MIN.
-300
300
300
300
MAX.
-400
400
400
400
30
30
150
160
150
150
-500
500
500
500
UNIT
V
V
V
A
A
A
A
˚C
˚C
T
stg
T
j
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes conducting
in free air.
MIN.
-
-
-
TYP.
-
-
45
MAX.
2.4
1.4
-
UNIT
K/W
K/W
K/W
1
Neglecting switching and reverse current losses.
April 1998
1
Rev 1.000

BYV74W-500 Related Products

BYV74W-500 BYV74W-300 BYV74W-400
Description Dual rectifier diodes ultrafast Dual rectifier diodes ultrafast Dual rectifier diodes ultrafast
Is it Rohs certified? incompatible incompatible conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknow unknow
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.36 V 1.36 V 1.36 V
Maximum non-repetitive peak forward current 160 A 160 A 160 A
Maximum operating temperature 150 °C 150 °C 150 °C
Maximum output current 30 A 30 A 30 A
Maximum repetitive peak reverse voltage 500 V 300 V 400 V
surface mount NO NO NO
JESD-609 code e0 e0 -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
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