SMD Transient Voltage Suppressor
COMCHIP
SMD Diodes Specialist
TVP06B6V8-G Thru. TVP06B601-G
Breakdown Voltage: 6.8 ~ 600Volts
Power Dissipation: 600 Watts
RoHS Device
Features
SMB/DO-214AA
-Glass passivated chip.
-Low leakage.
-Uni and Bidirectional unit.
-Excellent clamping capability.
-Very fast response time.
-RoHS compliant.
0.191(4.85)
0.171(4.35)
0.012(0.30)
0.006(0.15)
0.087(2.20)
0.077(1.96)
0.155(3.94)
0.130(3.30)
Mechanical Data
-Case: Molded plastic,JEDEC SMB/DO-214AA .
-Epoxy: UL 94V-0 rate flame retardant.
-Terminals: solderable per MIL-STD-750,
method 2026
-Polarity: Cathode band denoted.
-Approx. weight: 0.108 grams
0.096(2.44)
0.084(2.13)
0.060(1.52)
0.030(0.75)
0.216(5.50)
0.201(5.10)
0.008(0.20)
0.001(0.02)
Dimensions in inches and (millimeter)
Rating at 25
O
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Ratings and Electrical Characteristics
Characteristics
Peak power dissipation on 10/1000μS
waveform (Note 1 )
Peak pulse current on 10/1000μS waveform
(Note 1)
Steady state power dissipation at T
L
=75
O
Symbol
P
PP
Value
600
Units
W
I
PP
See Next Table
A
C
P
D
5.0
W
Peak forward surge current, 8.3mS single half
sine-wave uni-directional only (Note 2)
I
FSM
100
A
Maximum instantaneous forward voltage at
25.0A for uni-directional only (Note 3)
Operation junction temperature
Storage temperature range
V
F
T
J
T
STG
3.5/5.0
-55 to +150
-55 to +150
V
O
C
C
O
Note:
1. Non-repetitive current pulse, per Fig. 5 and derated above TA=25
O
C per Fig.1
2. Measured on 8.3 mS single half sine-wave or equivalent square wave, duty cycle=4 pulse per minute maximum.
3. V
F
<3.5V for devices of V
BR
<200V and V
F
<5.0V for devices of V
BR
>201V
REV:A
QW-BTV18
Page 1
SMD Transient Voltage Suppressor
Electrical Characteristics (TVP06B6V8-G Thru. TVP06B601-G)
Part No.
TVP06B6V8A(CA)-G
TVP06B7V5A(CA)-G
TVP06B8V2A(CA)-G
TVP06B9V1A(CA)-G
TVP06B10A(CA)-G
TVP06B11A(CA)-G
TVP06B12A(CA)-G
TVP06B13A(CA)-G
TVP06B15A(CA)-G
TVP06B16A(CA)-G
TVP06B18A(CA)-G
TVP06B20A(CA)-G
TVP06B22A(CA)-G
TVP06B24A(CA)-G
TVP06B27A(CA)-G
TVP06B30A(CA)-G
TVP06B33A(CA)-G
TVP06B36A(CA)-G
TVP06B39A(CA)-G
TVP06B43A(CA)-G
TVP06B47A(CA)-G
TVP06B51A(CA)-G
TVP06B56A(CA)-G
TVP06B62A(CA)-G
TVP06B68A(CA)-G
TVP06B75A(CA)-G
TVP06B82A(CA)-G
TVP06B91A(CA)-G
TVP06B101A(CA)-G
TVP06B111A(CA)-G
TVP06B121A(CA)-G
TVP06B131A(CA)-G
TVP06B151A(CA)-G
TVP06B161A(CA)-G
TVP06B171A(CA)-G
TVP06B181A(CA)-G
TVP06B201A(CA)-G
TVP06B221A(CA)-G
TVP06B251A(CA)-G
TVP06B301A(CA)-G
TVP06B351A(CA)-G
TVP06B381A(CA)-G
TVP06B401A(CA)-G
TVP06B441A(CA)-G
TVP06B501A(CA)-G
TVP06B521A(CA)-G
TVP06B551A(CA)-G
TVP06B601A(CA)-G
Note:
1) The available parts are “A” type only,the parts without A (V
BR
is ±10%) is not available.
2) Add suffix “C” or “CA” after part number to specify Bi-directional devices.
3) For Bi-Directional devices having V
R
of 10 volts and under, the I
R
limit is double.
COMCHIP
SMD Diodes Specialist
V
RWM
(V)
5.8
6.4
7.0
7.8
8.6
9.4
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53.0
58.1
64.1
70.1
77.8
85.5
94.0
102.0
111.0
128.0
136.0
145.0
154.0
171.0
185.0
214.0
256.0
299.3
324.9
342.0
376.2
427.5
444.6
470.3
513.0
Absolute Maximum Rating (T
A
=25 °C)
V
BR
Min. V
BR
Max.
I
T
I
FSM
(V)
6.46
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.0
20.90
22.80
25.65
28.50
31.35
34.20
37.05
40.85
44.65
48.45
53.20
58.90
64.60
71.25
77.90
86.45
95.00
104.50
114.00
123.50
142.50
152.00
161.50
171.00
190.00
209.00
237.50
285.00
332.50
361.00
380.00
418.00
475.00
494.00
522.50
570.00
(V)
7.14
7.88
8.61
9.56
10.50
11.55
12.60
13.65
15.75
16.80
18.90
21.00
23.10
25.20
28.35
31.50
34.65
37.80
40.90
45.15
49.35
53.55
58.80
65.10
71.40
78.75
86.10
95.55
105.00
115.50
126.00
136.50
157.50
168.00
178.50
189.00
210.00
231.00
262.50
315.00
367.50
399.00
420.00
462.00
525.00
546.00
577.50
630.00
(mA)
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
(A)@8.3mS
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
Electrical Characteristic (T
A
=25 °C)
Max V
C
I
R
@V
RWM
Marking Code
I
PP
(V)
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
103.0
113.0
125.0
137.0
152.0
165.0
179.0
207.0
219.0
234.0
246.0
274.0
328.0
344.0
414.0
482.0
524.4
548.0
607.2
690.0
717.6
759.0
828.0
I
PP
(A)
57.14
53.10
49.59
44.78
41.38
38.46
35.93
32.97
28.30
26.67
23.81
21.66
19.61
18.07
16.00
14.49
13.13
12.02
11.13
10.12
9.26
8.56
7.79
7.06
6.52
5.83
5.31
4.80
4.38
3.95
3.64
3.35
2.90
2.74
2.56
2.44
2.19
1.83
1.74
1.45
1.24
1.14
1.09
0.99
0.87
0.84
0.79
0.72
(uA)
1000
500
200
50
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
UNI
6V8A
7V5A
8V2A
9V1A
10A
11A
12A
13A
15A
16A
18A
20A
22A
24A
27A
30A
33A
36A
39A
43A
47A
51A
56A
62A
68A
75A
82A
91A
100A
110A
120A
130A
150A
160A
170A
180A
200A
220A
250A
300A
350A
380A
400A
440A
500A
520A
550A
600A
BI
6V8C
7V5C
8V2C
9V1C
10C
11C
12C
13C
15C
16C
18C
20C
22C
24C
27C
30C
33C
36C
39C
43C
47C
51C
56C
62C
68C
75C
82C
91C
100C
110C
120C
130C
150C
160C
170C
180C
200C
220C
250C
300C
350C
380C
400C
440C
500C
520C
550C
600C
REV:A
QW-BTV18
Page 2
SMD Transient Voltage Suppressor
Rating and Characteristics Curves (TVP06B5V0-G Thru. TVP06B601-G)
Fig.1- Pulse Derating Curve
140
100
COMCHIP
SMD Diodes Specialist
Fig.2- Maximum Non-Repetitive
Surge Current
8.3mS single half
sine-wave (JEDEC
method)
T
J
=T
J
Max.
Peak Pulse Derating in Percentage of Peak
Power or Current, (%)
120
100
80
60
I
FSM
, Peak Forward Surge Current (A)
175
Mounted on 5mm×5mm
copper pads
80
60
40
40
20
0
0
25
50
75
100
125
150
20
0
1
10
100
Ambient Temperature,T
A
(°C)
Number of Cycle at 60Hz
Fig.3 - Steady State Power Derating Curve
5.0
100
Fig.4 - Peak Pulse Power Rating Curve
Steady State Power Dissipation, ( W )
4.0
Peak Power, (kW)
10
3.0
2.0
1
1.0
0
0
25
50
75
100
125
150
175
200
0.1
0.1
1
10
100
1000
10000
Lead Temperature ,T
L
( °C)
Pulse Width,Td (μS)
Fig.5 - Pulse Waveform
120
tr=10μS
Pulse width (td) is defined as
the point where the peak
current decay to 50% of Ipp
Fig.6 - Typical Junction Capacitance
10000
Bi-directional
@zero bias
100
Junction Capacitance, (pF)
Peak value, I
PPM
Peak Pulse Current, (%)
1000
Uni-directional
@zero bias
Half value, I
PP
/2
Uni-directional
@V
RWM
100
50
10/1000μS waveform
as defined by R.E.A.
10
T
J
=25 C
f=1.0MHz
O
Bi-directional
@V
RWM
td
0
0
1
2
3
4
1
1
10
100
1000
Time, (mS)
Breakdown Voltage,V
BR
(V)
REV:A
QW-BTV18
Page 3
Microcontroller MCU
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