EEWORLDEEWORLDEEWORLD

Part Number

Search

TVP06B470CA-G

Description
tvs diodes - transient voltage suppressors 600w, 47v,bidir
Categorysemiconductor    Discrete semiconductor   
File Size83KB,5 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance  
Download Datasheet Parametric View All

TVP06B470CA-G Online Shopping

Suppliers Part Number Price MOQ In stock  
TVP06B470CA-G - - View Buy Now

TVP06B470CA-G Overview

tvs diodes - transient voltage suppressors 600w, 47v,bidir

TVP06B470CA-G Parametric

Parameter NameAttribute value
ManufactureComchip Technology
Product CategoryTVS Diodes - Transient Voltage Suppressors
RoHSYes
Factory Pack Quantity3000
SMD Transient Voltage Suppressor
COMCHIP
SMD Diodes Specialist
TVP06B6V8-G Thru. TVP06B601-G
Breakdown Voltage: 6.8 ~ 600Volts
Power Dissipation: 600 Watts
RoHS Device
Features
SMB/DO-214AA
-Glass passivated chip.
-Low leakage.
-Uni and Bidirectional unit.
-Excellent clamping capability.
-Very fast response time.
-RoHS compliant.
0.191(4.85)
0.171(4.35)
0.012(0.30)
0.006(0.15)
0.087(2.20)
0.077(1.96)
0.155(3.94)
0.130(3.30)
Mechanical Data
-Case: Molded plastic,JEDEC SMB/DO-214AA .
-Epoxy: UL 94V-0 rate flame retardant.
-Terminals: solderable per MIL-STD-750,
method 2026
-Polarity: Cathode band denoted.
-Approx. weight: 0.108 grams
0.096(2.44)
0.084(2.13)
0.060(1.52)
0.030(0.75)
0.216(5.50)
0.201(5.10)
0.008(0.20)
0.001(0.02)
Dimensions in inches and (millimeter)
Rating at 25
O
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Ratings and Electrical Characteristics
Characteristics
Peak power dissipation on 10/1000μS
waveform (Note 1 )
Peak pulse current on 10/1000μS waveform
(Note 1)
Steady state power dissipation at T
L
=75
O
Symbol
P
PP
Value
600
Units
W
I
PP
See Next Table
A
C
P
D
5.0
W
Peak forward surge current, 8.3mS single half
sine-wave uni-directional only (Note 2)
I
FSM
100
A
Maximum instantaneous forward voltage at
25.0A for uni-directional only (Note 3)
Operation junction temperature
Storage temperature range
V
F
T
J
T
STG
3.5/5.0
-55 to +150
-55 to +150
V
O
C
C
O
Note:
1. Non-repetitive current pulse, per Fig. 5 and derated above TA=25
O
C per Fig.1
2. Measured on 8.3 mS single half sine-wave or equivalent square wave, duty cycle=4 pulse per minute maximum.
3. V
F
<3.5V for devices of V
BR
<200V and V
F
<5.0V for devices of V
BR
>201V
REV:A
QW-BTV18
Page 1

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 264  1925  649  1389  1583  6  39  14  28  32 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号