ZTX657STZ datasheet, PDF - EEWORLD Datasheet

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ZTX657STZ: Descriptiontransistors bipolar - bjt npn super E-line; Categorysemiconductor Discrete semiconductor; File Size72KB，2 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/; Environmental Compliance

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ZTX657STZ Overview

transistors bipolar - bjt npn super E-line

ZTX657STZ Parametric

Parameter Name	Attribute value
Manufacture	Diodes Incorporated
Product Category	Transistors Bipolar - BJT
RoHS	Yes
Configurati	Single
Transistor Polarity	NPN
Collector- Base Voltage VCBO	300 V
Collector- Emitter Voltage VCEO Max	300 V
Emitter- Base Voltage VEBO	5 V
Maximum DC Collector Curre	0.5 A
Gain Bandwidth Product fT	30 MHz
Maximum Operating Temperature	+ 150 C
Mounting Style	Through Hole
Package / Case	TO-92
Continuous Collector Curre	0.5 A
DC Collector/Base Gain hfe Mi	50 at 100 mA at 5 V, 40 at 10 mA at 5 V
DC Current Gain hFE Max	50 at 100 mA at 5 V
Maximum Power Dissipati	1 W
Minimum Operating Temperature	- 55 C
Packaging	Bulk
Factory Pack Quantity	2000

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NPN SILICON PLANAR MEDIUM POWER

HIGH VOLTAGE TRANSISTORS

ISSUE 2 JULY 94

FEATURES

* 300 Volt V

CEO

* 0.5 Amp continuous current

* P

tot

=1 Watt

ZTX656

ZTX657

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature

Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

ZTX656

200

5

1

0.5

1

E-Line

TO92 Compatible

ZTX657

300

UNIT

V

A

W

°C

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-On Voltage

Static Forward

Current Transfer

Ratio

Transition

Frequency

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

f

T

50

40

30

ZTX656

MIN.

200

5

100

0.5

1

50

40

30

MHz

300

5

100

0.5

1

ZTX657

MAX.

MAX. MIN.

UNIT

V

nA

V

CONDITIONS.

I

C

=100

µ

A, I

E

=0

I

C

=10mA, I

B

=0*

I

E

=100

µ

A, I

C

=0

V

CB

=160V, I

E

=0

V

CB

=200V, I

E

=0

V

EB

=3V, I

C

=0

I

C

=100mA, I

B

=10mA*

I

C

=100mA, I

B

=10mA*

IC=100mA, V

CE

=5V*

I

C

=100mA, V

CE

=5V

I

C

=10mA, V

CE

=5V

I

C

=10mA, V

CE

=20V

f=20MHz

3-227

ZTX657STZ Related Products

	ZTX657STZ	ZTX657STOA	ZTX657STOB
Description	transistors bipolar - bjt npn super E-line	transistor npn med pwr E-line	transistor npn med pwr E-line
Package / Case	TO-92	E-Line-3, Formed Leads	E-Line-3, Formed Leads
Packaging	Bulk	Tape & Reel (TR)	Tape & Reel (TR)
Standard Package	-	2,000	2,000
Category	-	Discrete Semiconductor Products	Discrete Semiconductor Products
Family	-	Transistors (BJT) - Single	Transistors (BJT) - Single
Transistor Type	-	NPN	NPN
Current - Collector (Ic) (Max)	-	500mA	500mA
Voltage - Collector Emitter Breakdown (Max)	-	300V	300V
Vce Saturation (Max) @ Ib, Ic	-	500mV @ 10mA, 100mA	500mV @ 10mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	-	50 @ 100mA, 5V	50 @ 100mA, 5V
Power - Max	-	1W	1W
Frequency - Transiti	-	30MHz	30MHz
Mounting Type	-	Through Hole	Through Hole
Supplier Device Package	-	E-Line (TO-92 compatible)	E-Line (TO-92 compatible)

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