BB545/BB565...
Silicon Variable Capcitance Diode
•
For UHF-TV-tuners
•
High capacitance ratio
•
Low series inductance
•
Low series resistance
•
Excellent uniformity and matching due to
"in-line" matching assembly procedure
•
Pb-free (RoHS compliant) package
BB545
BB565/-02V
Type
BB545
BB565
BB565-02V
Package
SOD323
SCD80
SC79
Configuration
single
single
single
L
S
(nH)
1.8
0.6
0.6
Marking
white U
CC
C
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
Peak reverse voltage
R
≥
5kΩ
Forward current
Operating temperature range
Storage temperature
V
R
V
RM
I
F
T
op
T
stg
30
35
20
-55 ... 150
-55 ... 150
V
mA
°C
1
2011-06-15
BB545/BB565...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Reverse current
V
R
= 30 V
V
R
= 30 V,
T
A
= 85 °C
AC Characteristics
Symbol
min.
I
R
-
-
Values
typ.
max.
Unit
nA
-
-
10
200
pF
18.5
13.2
1.85
1.8
20
14.8
2.07
2
10
7.2
21.5
16.4
2.28
2.2
11
8.1
%
-
-
-
-
0.5
0.7
0.6
0.6
2.5
1.5
2
-
-
Ω
Diode capacitance
V
R
= 1 V,
f
= 1 MHz
V
R
= 2 V,
f
= 1 MHz
V
R
= 25 V,
f
= 1 MHz
V
R
= 28 V,
f
= 1 MHz
C
T
Capacitance ratio
V
R
= 1 V,
V
R
= 28 V,
f
= 1 MHz
C
T1
/
C
T28
C
T2
/
C
T25
∆C
T
/
C
T
9
6.3
-
Capacitance ratio
V
R
= 2 V,
V
R
= 25 V,
f
= 1 MHz
Capacitance matching
1)
V
R
= 1V to 28V,
f
= 1 MHz,
7
diodes sequence,
BB545
V
R
= 1V to 28V,
f
= 1 MHz,
4
diodes sequence,
BB565/-02V
V
R
= 1V to 28V,
f
= 1 MHz,
7
diodes sequence,
BB565/-02V
Series resistance
V
R
= 3 V,
f
= 470 MHz
r
S
L
S
-
-
Series inductance
1
For
nH
details please refer to Application Note 047
2
2011-06-15
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