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BZT52B8V2

Description
zener diodes 8.2 volt 410mw 2%
Categorysemiconductor    Discrete semiconductor   
File Size160KB,3 Pages
ManufacturerAll Sensors
Environmental Compliance
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BZT52B8V2 Overview

zener diodes 8.2 volt 410mw 2%

BZT52B8V2 Parametric

Parameter NameAttribute value
ManufactureTaiwan Semiconduc
Product CategoryZener Diodes
RoHSYes
Zener Voltage8.2 V
Voltage Tolerance2 %
Power Dissipati500 mW
Maximum Reverse Leakage Curre630 nA
Maximum Zener Impedance15 Ohms
Maximum Operating Temperature+ 150 C
ConfiguratiSingle
Mounting StyleSMD/SMT
Package / CaseSOD-123F
PackagingReel
Minimum Operating Temperature- 65 C
Factory Pack Quantity3000
BZT52B2V4-BZT52B75
500mW, 2% Tolerance SMD Zener Diode
Small Signal Diode
SOD-123F
B
Features
Wide zener voltage range selection : 2.4V to 75V
V
Z
Tolerance Selection of ±2%
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
C
A
D
E
F
Unit (mm)
Min
1.5
3.3
0.5
2.5
0.8
0.05
Max
1.7
3.7
0.7
2.7
1.0
0.2
Unit (inch)
Min
0.130
0.020
Max
0.146
0.028
0.059 0.067
Mechanical Data
Case : Flat lead SOD-123 small outline plastic package
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260
°C/10s
Polarity : Indicated by cathode band
Weight : 8.85±0.5 mg
Dimensions
A
B
C
D
E
F
0.098 0.106
0.031 0.039
0.002 0.008
Ordering Information
Part No.
BZT52Bxx RH
Package
SOD-123F
Packing
3Kpcs / 7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Forward Voltage
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
I
F
=10mA
(Note 1)
Symbol
P
D
V
F
RθJA
T
J
, T
STG
Value
500
1
350
-65 to + 150
Units
mW
V
°C/W
°C
Notes:1. Valid provided that electrodes are kept at ambient temperature
Zener I vs. V Characteristics
Curren
I
F
V
ZM
V
Z
V
BR
V
R
I
R
I
ZK
I
ZT
V
F
Voltage
V
BR
I
ZK
Z
ZK
I
ZT
V
Z
Z
ZT
Forward Region
: Voltage at I
ZK
: Test current for voltage V
BR
: Dynamic impedance at I
ZK
: Test current for voltage V
Z
: Voltage at current I
ZT
: Dynamic impedance at I
ZT
: Maximum steady state current
: Voltage at I
ZM
I
ZM
BreakdownRegion
Leakage Region
I
ZM
V
ZM
Version :
D10
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