BZT55B2V4-BZT55B75
500mW, 2% Tolerance SMD Zener Diode
Small Signal Diode
QUADRO Mini-MELF (LS34)
HERMETICALLY SEALED GLASS
C
Features
Wide zener voltage range selection : 2.4V to 75V
V
Z
Tolerance Selection of ±2%
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
All External Surfaces are Corrosion Resistant and
Leads are Readily Solderable
A
B
E
D
Mechanical Data
Case : QUADRO Mini-MELF Package (JEDEC DO-213)
High temperature soldering guaranteed : 270°C/10s
Polarity : Indicated by cathode band
Weight : 29 ± 2.5 mg
Dimensions
A
B
C
D
E
Unit (mm)
Min
3.30
1.40
0.25
1.25
Max
3.70
1.60
0.40
1.40
Unit (inch)
Min
Max
0.130 0.146
0.055 0.063
0.010 0.016
0.049 0.055
0.071
1.80
Ordering Information
Part No.
BZT55BXXX L1
BZT55BXXX L0
Package
Packing
QUADRO Mini-MELF 2.5Kpcs / 7" Reel
QUADRO Mini-MELF 10Kpcs / 13" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Forward Voltage
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
I
F
=10mA
(Note 1)
Symbol
P
D
V
F
RθJA
T
J
, T
STG
Value
500
1.0
500
-65 to + 175
Units
mW
V
°C/W
°C
Notes:1. Valid provided that electrodes are kept at ambient temperature
Zener I vs. V Characteristics
Current
I
F
V
ZM
V
Z
V
BR
V
R
I
R
I
ZK
V
F
Voltage
V
BR
I
ZK
Z
ZK
I
ZT
V
Z
Z
ZT
Forward Region
: Voltage at I
ZK
: Test current for voltage V
BR
: Dynamic impedance at I
ZK
: Test current for voltage V
Z
: Voltage at current I
ZT
: Dynamic impedance at I
ZT
: Maximum steady state current
: Voltage at I
ZM
I
ZT
I
ZM
BreakdownRegion
Leakage Region
I
ZM
V
ZM
Version : E09
BZT55B2V4-BZT55B75
500mW, 2% Tolerance SMD Zener Diode
Small Signal Diode
Electrical Characteristics
Ta = 25°C unless otherwise noted
V
F
Forward Voltage = 1.0V Maximum @ I
F
= 10 mA for all part numbers
Part Number
BZT55B2V4
BZT55B2V7
BZT55B3V0
BZT55B3V3
BZT55B3V6
BZT55B3V9
BZT55B4V3
BZT55B4V7
BZT55B5V1
BZT55B5V6
BZT55B6V2
BZT55B6V8
BZT55B7V5
BZT55B8V2
BZT55B9V1
BZT55B10
BZT55B11
BZT55B12
BZT55B13
BZT55B15
BZT55B16
BZT55B18
BZT55B20
BZT55B22
BZT55B24
BZT55B27
BZT55B30
BZT55B33
BZT55B36
BZT55B39
BZT55B43
BZT55B47
BZT55B51
BZT55B56
BZT55B62
BZT55B68
BZT55B75
V
Z
@ I
ZT
(Volt)
Nom
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
Min
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.78
11.76
12.74
14.70
15.68
17.64
19.60
21.56
23.52
26.46
29.40
32.34
35.28
38.22
42.14
46.06
49.98
54.88
60.76
66.64
73.50
Max
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.22
12.24
13.26
15.30
16.32
18.36
20.40
22.44
24.48
27.54
30.60
33.66
36.72
39.78
43.86
47.94
52.02
57.12
63.24
69.36
76.50
I
ZT
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
Z
ZT
@ I
ZT
(Ω)
Max
85
85
85
85
85
85
75
60
35
25
10
8
7
7
10
15
20
20
26
30
40
50
55
55
80
80
80
80
80
90
90
110
125
135
150
160
170
I
ZK
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Z
ZK
@ I
ZK
(Ω)
Max
600
600
600
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
110
110
170
170
220
220
220
220
220
220
220
500
600
700
700
1000
1000
1000
1000
I
R
@ V
R
(μA)
Max
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
(V)
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
28
32
35
38
42
47
51
56
Notes:
1. The Zener Voltage (V
Z
) is tested under pulse condition of 10ms.
2. The device numbers listed have a standard tolerance on the nominal zener voltage of
±2%.
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and
tighter voltage tolerances, contact your nearest
Taiwan semiconductor
representative.
4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value
equal to 10% of the DC zener current (
I
ZT
or
I
ZK
) is superimposed to
I
ZT
or
I
ZK
.
Version : E09
BZT55B2V4-BZT55B75
500mW, 2% Tolerance SMD Zener Diode
Small Signal Diode
Rating and Sharacteristic Curves
FIG 1 Typical Forward Characteristics
1000
100
FIG 2 Zener Breakdown Characteristics
Forward Current (mA)
Zener Current (mA)
10
100
Ta=25°C
10
1
Ta=25°C
0
1
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0
0
1
2
3
4
5
6
7
8
9
10
11
12
Forward Voltage (V)
Zener Voltage (V)
FIG 3 Zener Breakdown Characteristics
100
600
FIG 4 Admissible Power Disspation Curve
Power Dissipation (mW)
500
400
300
200
100
0
10
Zener Current (mA)
1
0
0
10
20
30
40
50
60
70
80
0
40
80
120
160
200
Zener Voltage (V)
Ambient Tempeture (°C)
FIG 5 Typical Capacitance
Dynamic Impedence (Ώ)
1000
1000
FIG 6 Effect of Zener Voltage on Impedence
Iz=1mA
Iz=5mA
Capacitance(pF)
100
1V Bias
100
Ta=150°C
10
Bias at 50% of VZ(Nom)
10
Iz=20m
Ta=25°C
1
1
1
10
100
1
10
100
Zener Voltage (V)
Zener Voltage (V)
Version : E09
RF/Wirelessly
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