BLF2425M7L140;
BLF2425M7LS140
Power LDMOS transistor
Rev. 3 — 6 September 2012
Product data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at
frequencies from 2400 MHz to 2500 MHz.
The BLF2425M7L140 and BLF2425M7LS140 are designed for high-power CW
applications and are assembled in high performance ceramic packages, available in
eared and earless versions
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C; I
Dq
= 1300 mA in a common source class-AB production
test circuit.
Test signal
CW
f
(MHz)
2450
V
DS
(V)
28
P
L(AV)
(W)
140
G
p
(dB)
18.5
D
(%)
52
1.2 Features and benefits
High efficiency
High power gain
Excellent ruggedness
Excellent thermal stability
Integrated ESD protection
Designed for broadband operation (2400 MHz to 2500 MHz)
Internally matched
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications in the frequency range from 2400 MHz to
2500 MHz
NXP Semiconductors
BLF2425M7L(S)140
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLF2425M7L140 (SOT502A)
1
3
2
2
3
sym112
1
BLF2425M7LS140 (SOT502B)
1
2
3
drain
gate
source
[1]
1
3
2
2
1
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF2425M7L140
BLF2425M7LS140
-
-
flanged ceramic package; 2 mounting holes; 2 leads
earless flanged ceramic package; 2 leads
Version
SOT502A
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
-
Max
65
+13
-
225
Unit
V
V
C
C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 125 W
Typ
0.28
Unit
K/W
BLF2425M7L140; BLF2425M7LS140
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 6 September 2012
2 of 11
NXP Semiconductors
BLF2425M7L(S)140
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
V
GS
= 0 V; I
D
= 2.16 mA
V
DS
= 10 V; I
D
= 216 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 10.8 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 7.56 A
Min Typ
65
1.5
-
-
-
-
-
-
1.9
-
41
-
16
69
Max Unit
-
2.3
5
-
500
-
-
V
V
A
A
nA
S
m
Table 7.
RF characteristics
Test signal: CW; f = 2450 MHz; V
DS
= 28 V; I
Dq
= 1300 mA; T
case
= 25
C unless otherwise specified
in a class-AB production test circuit.
Symbol Parameter
G
p
RL
in
D
power gain
input return loss
drain efficiency
Conditions
P
L
= 140 W
P
L
= 140 W
P
L
= 140 W
Min Typ
16
-
46
18.5
16
52
Max Unit
-
8
-
dB
dB
%
7. Test information
7.1 Ruggedness in class-AB operation
The BLF2425M7L140 and BLF2425M7LS140 are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 28 V; I
Dq
= 1300 mA; P
L
= 140 W (CW); f = 2450 MHz.
BLF2425M7L140; BLF2425M7LS140
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 6 September 2012
3 of 11
NXP Semiconductors
BLF2425M7L(S)140
Power LDMOS transistor
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull data. Typical values unless otherwise specified. I
Dq
= 1300 mA; V
DS
= 28 V.
Z
S
and Z
L
defined in
Figure 1.
f
(MHz)
2400
2450
2500
Z
S
()
3.7
5.4j
6.9
5.0j
8.7
2.0j
Z
L
()
1.3
1.5j
1.5
1.6j
1.5
1.6j
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Circuit information
&
&
&
&
5
&
&
&
&
DDD
Printed-Circuit Board (PCB): Rogers 4350B;
r
= 3.5; thickness = 0.508 mm;
thickness copper plating = 35
m.
See
Table 9
for a list of components.
Fig 2.
Component layout for application circuit
BLF2425M7L140; BLF2425M7LS140
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 6 September 2012
4 of 11
NXP Semiconductors
BLF2425M7L(S)140
Power LDMOS transistor
Table 9.
List of components
For test circuit see
Figure 2.
Component
C1, C4, C5
C2, C6
C3
C7
C8
R1
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
resistor
Value
15 pF
10
F,
50 V
100 nF
62 pF
22
F,
63 V
10
SMD 0805; Bourns
Remarks
ATC100B
Murata
Murata
ATC100B
7.4 Graphical data
DDD
*
S
'
*
S
DDD
'
3
/
3
/
V
DS
= 28 V; I
Dq
= 1300 mA.
(1) G
p
at f = 2400 MHz
(2) G
p
at f = 2450 MHz
(3) G
p
at f = 2500 MHz
(4)
D
at f = 2400 MHz
(5)
D
at f = 2450 MHz
(6)
D
at f = 2500 MHz
V
DS
= 28 V; I
Dq
= 1300 mA.
(1) G
p
at f = 2400 MHz
(2) G
p
at f = 2450 MHz
(3) G
p
at f = 2500 MHz
(4)
D
at f = 2400 MHz
(5)
D
at f = 2450 MHz
(6)
D
at f = 2500 MHz
Fig 3.
Power gain and drain efficiency as function of
load power; typical values
Fig 4.
Power gain and drain efficiency as function of
load power; typical values
BLF2425M7L140; BLF2425M7LS140
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 6 September 2012
5 of 11
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