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CLS02(TE16L,Q)

Description
schottky diodes & rectifiers diode schottky 40v 10a
CategoryDiscrete semiconductor    diode   
File Size167KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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CLS02(TE16L,Q) Overview

schottky diodes & rectifiers diode schottky 40v 10a

CLS02(TE16L,Q) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
Reach Compliance Codeunknow
Is SamacsysN
Base Number Matches1
CLS02
TOSHIBA Schottky Barrier Diode
CLS02
Switching-Mode Power Supply (Secondary-Rectification)
Applications (Low Voltage)
DC/DC Converter Applications
Forward voltage: V
FM
= 0.55 V (max)
5.5
±
0.1
Unit: mm
4
±
0.2
1.5
±
0.1
0.6
±
0.1
Suitable for compact assembly due to small surface-mount package:
“L−FLAT
TM
” (Toshiba package name)
1.2
±
0.1
1.8
±
0.1
0 ~ 0.03
2.7
±
0.2
Characteristics
Repetitive peak reverse voltage
Average forward current
Non-repetitive peak surge current
Junction temperature
Storage temperature range
Symbol
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
Rating
40
10 (Note.1)
100 (50 Hz)
−40~125
−40~150
Unit
2.85
±
0.2
V
A
A
°C
°C
ANODE
CATHODE
JEDEC
JEITA
TOSHIBA
3-4F1A
Note1: Tℓ
=
75°C
Rectangular waveform (α
=
180°), V
R
=
20 V
Weight: 0.15 g (typ.)
Note2: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
V
FM (1)
Peak forward voltage
V
FM (2)
V
FM (3)
Peak repetitive reverse current
Junction capacitance
I
RRM (1)
I
RRM (2)
C
j
Test Condition
I
FM
=
3.0 A (pulse test)
I
FM
=
5.0 A (pulse test)
I
FM
=
10 A (pulse test)
V
RRM
=
5 V (pulse test)
V
RRM
=
40 V (pulse test)
V
R
=
10 V, f
=
1.0 MHz
Device mounted on a glass-epoxy
board
(board size: 50 mm
×
50 mm)
(board thickness: 1.6 t)
(soldering land)
Cathode 5.7 mm × 6.2 mm
Anode
4.5 mm × 3.4 mm
Min
Typ.
0.36
0.41
0.5
4.0
0.03
420
Max
0.55
1.0
μA
mA
pF
V
Unit
Thermal resistance
(junction to ambient)
R
th (j-a)
100
°C/W
Thermal resistance
(junction to lead)
R
th (j-ℓ)
5
°C/W
1
2007-11-06
3.2
±
0.2
4.2
±
0.2
Absolute Maximum Ratings
(Ta = 25°C)
0.8
±
0.2
Repetitive peak reverse voltage: V
RRM
= 40 V
8.2
±
0.2
Average forward current: I
F (AV)
= 10 A
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