EEWORLDEEWORLDEEWORLD

Part Number

Search

MRF6V14300HR5

Description
transistors RF mosfet vhv6 1400mhz 50v
Categorysemiconductor    Discrete semiconductor   
File Size633KB,10 Pages
ManufacturerFREESCALE (NXP)
Environmental Compliance  
Download Datasheet Parametric Compare View All

MRF6V14300HR5 Online Shopping

Suppliers Part Number Price MOQ In stock  
MRF6V14300HR5 - - View Buy Now

MRF6V14300HR5 Overview

transistors RF mosfet vhv6 1400mhz 50v

MRF6V14300HR5 Parametric

Parameter NameAttribute value
ManufactureFreescale Semiconduc
Product CategoryTransistors RF MOSFET
RoHSYes
ConfiguratiSingle
Transistor PolarityN-Channel
Frequency1.2 GHz to 1.4 GHz
Gai18 dB
Output Powe39.6 W
Vds - Drain-Source Breakdown Voltage100 V
Vgs - Gate-Source Breakdown Voltage10 V
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseNI-780
PackagingReel
Factory Pack Quantity50
Vgs th - Gate-Source Threshold Voltage2.4 V
Unit Weigh6.440 g
Freescale Semiconductor
Technical Data
Document Number: MRF6V14300H
Rev. 3, 4/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies
between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are
suitable for use in pulsed applications.
Typical Pulsed Performance: V
DD
= 50 Volts, I
DQ
= 150 mA, P
out
=
330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300
μ
sec,
Duty Cycle = 12%
Power Gain — 18 dB
Drain Efficiency — 60.5%
Capable of Handling 5:1 VSWR, @ 50 Vdc, 1400 MHz, 330 Watts Peak
Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 V
DD
Operation
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6V14300HR3
MRF6V14300HSR3
1400 MHz, 330 W, 50 V
PULSED
LATERAL N-
-CHANNEL
RF POWER MOSFETs
CASE 465-
-06, STYLE 1
NI-
-780
MRF6V14300HR3
CASE 465A-
-06, STYLE 1
NI-
-780S
MRF6V14300HSR3
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +100
--6.0, +10
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 65°C, 330 W Pulsed, 300
μsec
Pulse Width, 12% Duty Cycle
Symbol
Z
θJC
Value
(2,3)
0.13
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
MRF6V14300HR3 MRF6V14300HSR3
1
RF Device Data
Freescale Semiconductor

MRF6V14300HR5 Related Products

MRF6V14300HR5 MRF6V14300HSR5 MRF6V14300HR3 MRF6V14300HSR3
Description transistors RF mosfet vhv6 1400mhz 50v transistors RF mosfet vhv6 1400mhz 50v mosfet RF N-CH 50v ni780 mosfet RF N-CH 50v ni780s
Frequency 1.2 GHz to 1.4 GHz 1.2 GHz to 1.4 GHz 1.4GHz 1.4GHz
Gai 18 dB 18 dB 18dB 18dB
Package / Case NI-780 NI-780S NI-780 NI-780S
Packaging Reel Reel Tape & Reel (TR) Tape & Reel (TR)
LCD driver knowledge
Share it....
光绪爷 MCU
Storage Array Technology
[list] [*][size=6]High reliability[/size] [/list][list=1] [*][size=4]Device redundancy (multi-control)[/size] [*][size=4]Disk bad sector detection/repair[/size] [*][size=4]Disk health analysis[/size] ...
白丁 FPGA/CPLD
Questions about ADC0832
This is the ADC0832 sampling and digital tube display program I wrote. I switch the sampling channel by pressing the button, but it still doesn’t work after a long time. I sincerely ask for help from ...
窑吆2009 51mcu
The following error message appears when running the VC++2005 simulator. (The project can be compiled normally and successfully)
The following error message appears when running the VC++2005 simulator. (The project can be compiled normally and successfully) Error: Failed to read the saved state file Unable to start debugging. D...
mef575 Embedded System
【Book Collection】Basics of Radio Engineering
[b]Table of Contents:[/b] Part 1 Fundamentals of Electrical Engineering Chapter 1 Basic Concepts and Basic Laws of Direct Current Chapter 2 Chemical Power Sources Chapter 3 Basic Concepts of Magnetism...
wzt RF/Wirelessly
Nodic nRF52840 DK Review Summary
Evaluation activities: https://bbs.eeworld.com.cn/elecplay/content/98 Evaluation sharing: @jj1989 [/url] [url=https://bbs.eeworld.com.cn/thread-1061775-1-1.html] [nRF52840 DK Evaluation] Unboxing, dev...
okhxyyo Talking

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1752  460  2591  1807  2798  36  10  53  37  57 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号