Freescale Semiconductor
Technical Data
Document Number: MRF8P8300H
Rev. 1, 4/2013
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 750 to 820 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
2000 mA, P
out
= 96 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
790 MHz
805 MHz
820 MHz
G
ps
(dB)
20.9
21.0
20.9
D
(%)
35.2
35.5
35.7
Output PAR
(dB)
6.2
6.2
6.1
ACPR
(dBc)
--38.1
--38.1
--38.2
MRF8P8300HR6
MRF8P8300HSR6
750-
-820 MHz, 96 W AVG., 28 V
SINGLE W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
Capable of Handling 10:1 VSWR, @ 32 Vdc, 805 MHz, 500 Watts CW Output
Power (3 dB Input Overdrive from Rated P
out
), Designed for
Enhanced Ruggedness
Typical P
out
@ 1 dB Compression Point
≃
340 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
--0.5, +70
--6.0, +10
32, +0
--65 to +150
150
225
Unit
Vdc
Vdc
Vdc
C
C
C
NI-
-1230-
-4H
MRF8P8300HR6
NI-
-1230-
-4S
MRF8P8300HSR6
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
2 RF
outB
/V
DSB
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80C, 96 W CW, 28 Vdc, I
DQ
= 2000 mA, 820 MHz
Case Temperature 85C, 300 W CW, 28 Vdc, I
DQ
= 2000 mA, 820 MHz
Symbol
R
JC
Value
(2,3)
0.26
0.21
Unit
C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor, Inc., 2011, 2013. All rights reserved.
MRF8P8300HR6 MRF8P8300HSR6
1
RF Device Data
Freescale Semiconductor, Inc.
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2
A
IV
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 70 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 400
Adc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ
= 2000 mA, Measured in Functional Test)
Drain--Source On--Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 3 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.5
2.3
0.1
2.3
3.1
0.2
3.0
3.8
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
Adc
Adc
Adc
Symbol
Min
Typ
Max
Unit
Functional Tests
(2)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 2000 mA, P
out
= 96 W Avg., f = 820 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
D
PAR
ACPR
IRL
20.0
34.5
5.9
—
—
20.9
35.7
6.1
--38.2
--12
23.5
—
—
--36.5
--9
dB
%
dB
dBc
dB
Typical Performance over Frequency
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 2000 mA, P
out
= 96 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
5
MHz Offset.
Frequency
790 MHz
805 MHz
820 MHz
1. Each side of device measured separately.
2. Part internally matched both on input and output.
(continued)
G
ps
(dB)
20.9
21.0
20.9
D
(%)
35.2
35.5
35.7
Output PAR
(dB)
6.2
6.2
6.1
ACPR
(dBc)
--38.1
--38.1
--38.2
IRL
(dB)
--11
--12
--12
MRF8P8300HR6 MRF8P8300HSR6
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 290 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 30 MHz Bandwidth @ P
out
= 96 W Avg.
Gain Variation over Temperature
(--30C to +85C)
Output Power Variation over Temperature
(--30C to +85C)
Symbol
P1dB
IMD
sym
Min
—
—
Typ
340
35
Max
—
—
Unit
W
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 2000 mA, 790--820 MHz Bandwidth
VBW
res
G
F
G
P1dB
—
—
—
—
35
0.5
0.0185
0.0076
—
—
—
—
MHz
dB
dB/C
dB/C
MRF8P8300HR6 MRF8P8300HSR6
RF Device Data
Freescale Semiconductor, Inc.
3
B1
C27
C23
C11
R1
C55
C39
C47*
C41
C43
C44
C36
C34
C32
C38
C42
C48*
C40
C56
C45
C46
C51
C50
C52
C49
C13
C25
C29
C53
C57
C4
C5*
C9
C17
C37
C15
C19
C21
C22
CUT OUT AREA
C31
C33
C35
C7
C8
C1
C2
C3
C6*
C18
C10
C20
C16
MRF8P8300H
Rev. 2
R2
C12
C24
C14
C26
C28
C30
C54
C58
B2
*C5, C6, C47, and C48 are mounted vertically.
Figure 2. MRF8P8300HR6(HSR6) Test Circuit Component Layout
Table 5. MRF8P8300HR6(HSR6) Test Circuit Component Designations and Values
Part
B1, B2
C1, C2, C39, C40, C41, C42
C3, C49, C50
C4
C5, C6, C11, C12, C47, C48
C7, C8, C45, C46
C9, C10
C13, C14, C19, C20, C25, C26
C15, C16, C35, C36
C17, C18
C21, C22
C23, C24
C27, C28
C29, C30
C31, C32
C33, C34
C37, C38
C43, C44
C51, C52
C53, C54, C55, C56
C57, C58
R1, R2
PCB
Description
Short Ferrite Beads
2.1 pF Chip Capacitors
1.0 pF Chip Capacitors
120 pF Chip Capacitor
39 pF Chip Capacitors
1.1 pF Chip Capacitors
4.7
F,
50 V Chip Capacitors
10 pF Chip Capacitors
4.7 pF Chip Capacitors
4.3 pF Chip Capacitors
8.2 pF Chip Capacitors
22
F
Electrolytic Capacitors
20 pF Chip Capacitors
30 pF Chip Capacitors
13 pF Chip Capacitors
7.5 pF Chip Capacitors
1.5 pF Chip Capacitors
0.8 pF Chip Capacitors
2.0 pF Chip Capacitors
22
F,
50 V Chip Capacitors
470
F,
63 V Electrolytic Capacitors
3
Chip Resistors
0.030,
r
= 3.5
Part Number
MPZ2012S300AT000
ATC100B2R1BT500XT
ATC100B1R0BT500XT
ATC100B121JT500XT
ATC100B390JT500XT
ATC100B1R1BT500XT
C4532X5R1H475KT
ATC100B100JT500XT
ATC100B4R7CT500XT
ATC100B4R3CT500XT
ATC100B8R2CT500XT
UUD1V220MCL1GS
ATC100B200JT500XT
ATC100B300JT500XT
ATC100B130JT500XT
ATC100B7R5CT500XT
ATC100B1R5BT500XT
ATC100B0R8BT500XT
ATC100B2R0BT500XT
C5750JF1H226ZT
MCGPR63V477M13X26--RH
CRCW12063R00FNEA
RF35A2
Manufacturer
TDK
ATC
ATC
ATC
ATC
ATC
TDK
ATC
ATC
ATC
ATC
Nichicon
ATC
ATC
ATC
ATC
ATC
ATC
ATC
TDK
Multicomp
Vishay
Taconic
MRF8P8300HR6 MRF8P8300HSR6
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
D
, DRAIN
EFFICIENCY (%)
25
24
23
G
ps
, POWER GAIN (dB)
22
21
20
19
18
17
16
15
730
IRL
ACPR
750
770
790
810
830
850
870
PARC
G
ps
D
36
34
V
DD
= 28 Vdc, P
out
= 96 W (Avg.), I
DQ
= 2000 mA
32
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 30
28
--30
--32
ACPR (dBc)
--34
--36
--38
--40
890
f, FREQUENCY (MHz)
IRL, INPUT RETURN LOSS (dB)
0
--4
--8
--12
--16
--20
--1
--1.3
--1.6
--1.9
--2.2
--2.5
PARC (dB)
Figure 3. Output Peak- -Average Ratio Compression (PARC)
-to-
Broadband Performance @ P
out
= 96 Watts Avg.
--10
--20
--30
--40
--50
--60
IMD, INTERMODULATION DISTORTION (dBc)
V
DD
= 28 Vdc, P
out
= 290 W (PEP), I
DQ
= 2000 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 805 MHz
IM3--U
IM3--L
IM5--U
IM5--L
IM7--U
IM7--L
1
10
TWO--TONE SPACING (MHz)
100
Figure 4. Intermodulation Distortion Products
versus Two-
-Tone Spacing
22
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
21.5
G
ps
, POWER GAIN (dB)
21
20.5
20
19.5
19
1
0
--1
--2
--3
--4
--5
--1 dB = 75.1 W
--3 dB = 153.4 W
--2 dB = 110.5 W
PARC
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
40
70
100
130
160
G
ps
56
ACPR
D
50
44
38
32
26
20
190
--25
--30
--35
--40
--45
--50
--55
ACPR (dBc)
V
DD
= 28 Vdc, I
DQ
= 2000 mA, f = 805 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
P
out
, OUTPUT POWER (WATTS)
Figure 5. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
MRF8P8300HR6 MRF8P8300HSR6
RF Device Data
Freescale Semiconductor, Inc.
5
D
DRAIN EFFICIENCY (%)
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