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SM532023084F4G8

Description
DRAM
Categorystorage    storage   
File Size227KB,25 Pages
ManufacturerSMART Modular Technology Inc
Download Datasheet Parametric View All

SM532023084F4G8 Overview

DRAM

SM532023084F4G8 Parametric

Parameter NameAttribute value
Objectid110127887
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
SMART
Features
®
SM5320230UUFUGU
September 8, 1997
Modular Technologies
8MByte (2M x 32) DRAM Module - 1Mx16 based
100-pin DIMM, Non-buffered
Part Numbers
SM53202300UFUGU
SM53202301UFUGU
SM53202308UFUGU
SM53202309UFUGU
Standard
:
JEDEC
Configuration
:
Non-ECC
Access Time
:
60/70/80ns
Operation Mode
:
FPM/EDO
Operating Voltage :
3.3/5.0V
Refresh
:
1K/4K
Device Physicals
:
400mil SOJ/TSOP
Lead Finish
:
Gold
Length x Height
:
3.550" x 1.000"
No. of sides
:
Double-sided
Mating Connector (Examples)
Vertical
:
AMP-390070-6 (3.3V, Gold)
:
:
:
:
FPM, 5.0V
FPM, 3.3V
EDO, 5.0V
EDO, 3.3V
Note: Refer last page for all "U” options.
Functional Diagram
RAS0#
CAS0#
CAS1#
WE#
OE#
1Mx16
DRAM
1Mx16
DRAM
RAS2#
CAS2#
CAS3#
1Mx16
DRAM
RAS1#
DQ0~DQ15
1Mx16
DRAM
RAS3#
DQ16~DQ31
DQ0~DQ31
SA0~SA2
SCL
Notes : 1. A0~A9/A10 & A11 are connected to all DRAMs
(A10 & A11 are NC for 1K refresh module).
2. Data is terminated using 10
series resistors.
3. Refer to note on page 2 for details on CAS# control
scheme.
A0~A2 SDA
SCL
SERIAL PD
EEPROM
SDA
V
CC
V
SS
Decoupling capacitors
to all devices.
( All specifications of this device are subject to change without notice.)
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
1

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