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3N259

Description
Bridge Rectifier Diode, 1 Phase, 2A, 1000V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size71KB,2 Pages
ManufacturerGeneral Instrument
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Bridge Rectifier Diode, 1 Phase, 2A, 1000V V(RRM), Silicon,

3N259 Parametric

Parameter NameAttribute value
Objectid1438980687
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresUL RECOGNIZED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PSIP-T4
Maximum non-repetitive peak forward current60 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature165 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current5 µA
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE

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Index Files: 419  1971  2443  2114  2768  9  40  50  43  56 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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