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JAN2N6802

Description
2.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
CategoryDiscrete semiconductor    The transistor   
File Size365KB,26 Pages
ManufacturerIntersil ( Renesas )
Websitehttp://www.intersil.com/cda/home/
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2.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

JAN2N6802 Parametric

Parameter NameAttribute value
Objectid2078481593
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)2.5 A
Maximum drain-source on-resistance1.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-205AF
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)11 A
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 29 February 2018.
INCH-POUND
MIL-PRF-19500/557M
29 November 2017
SUPERSEDING
MIL-PRF-19500/557L
21 March 2014
PERFORMANCE SPECIFICATION SHEET
*
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON,
TYPES 2N6796, 2N6798, 2N6800, AND 2N6802
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and
MIL-PRF-19500.
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for a N-channel, enhancement-mode,
MOSFET, power transistor intended for use in high density power switching applications. Four levels of product
assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device. Two levels of product
assurance are provided for each unencapsulated device.
* 1.2 Package outlines. The device package outlines are as follows: TO-205AF in accordance with
figure 1
and
leadless chip carrier (LCC) in accordance with
figure 2
for all encapsulated device types. See figures
3, 4,
and 5 for
all unencapsulated devices.
1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
Type
(1)
PT (2)
TC =
+25°C
W
2N6796
2N6798
2N6800
2N6802
25
25
25
25
PT
TA =
+25°C
W
0.8
0.8
0.8
0.8
RθJC
(3)
VDS
VDG
VGS
ID1 (4) (5)
TC =
+25°C
A dc
8.0
5.5
3.0
2.5
ID2 (4)
TC =
+100°C
A dc
5.0
3.5
2.0
1.5
A dc
8.0
5.5
3.0
2.5
IS
IDM
(6)
TJ and
TSTG
V
ISO
70,000
foot
altitude
°C/W
5.0
5.0
5.0
5.0
V dc
100
200
400
500
V dc
100
200
400
500
V dc
±20
±20
±20
±20
A(pk)
32
22
14
11
°C
-55 to
+150
V dc
400
500
(1)
(2)
(3)
(4)
Electrical characteristics for "U" suffix devices are identical to the corresponding non"U" suffix devices unless
otherwise specified.
Derate linearly 0.2 W/°C for T
C
> +25°C.
See
figure 6,
thermal impedance curves.
The following formula derives the maximum theoretical I
D
limit. I
D
is also limited by package and internal
wires and may be limited due to pin diameter.
I
D
=
(
R
θ
JC
T
JM
- T
C
)
x
(
R
DS
( on ) at T
JM
)
(5)
(6)
See
figure 7,
maximum drain current graph.
I
DM
= 4 x I
D1
as calculated in note 4.
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O.
Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dla.mil.
Since contact information can change, you
may want to verify the currency of this address information using the ASSIST Online database at
https://assist.dla.mil/.
AMSC N/A
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