DISCRETE SEMICONDUCTORS
SMA BZG01 series
Voltage regulator diodes
Product specification
1999 Dec 23
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Ideal for surface mount automotive
applications
•
Low leakage current
•
Excellent stability
•
UL 94V-O classified plastic
package
•
Zener working voltage range:
10 to 270 V for 35 types
•
Supplied in 12 mm embossed tape
and reel, 1500 and 7500 pieces
•
Marking: cathode, date code,
type name
•
Easy pick and place.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
SMA BZG01 series
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic. The small rectangular
package has two J bent leads.
Fig.1 Simplified outline (DO-214AC) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
P
tot
P
tot
P
ZSM
T
stg
T
j
PARAMETER
total power dissipation
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
CONDITIONS
T
tp
= 100
°C;
see Fig.2
T
amb
= 25
°C;
see Fig.2; device
mounted on an Al
2
O
3
PCB (see Fig.5)
t
p
= 100
µs;
square pulse;
T
j
= 25
°C
prior to surge; see Fig.3
MIN.
−
−
−
−65
−65
MAX.
2.50
1.50
150
+175
+175
UNIT
W
W
W
°C
°C
1999 Dec 23
2
Philips Semiconductors
Product specification
Voltage regulator diodes
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
Per type
T
j
= 25
°C
unless otherwise specified.
TYPE
No.
SUFFIX
(1)
C10
C11
C12
C13
C15
C16
C18
C20
C22
C24
C27
C30
C33
C36
C39
C43
C47
C51
C56
C62
C68
C75
C82
C91
C100
C110
WORKING VOLTAGE
V
Z
(V) at I
Z
MIN.
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
94
104
NOM.
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
MAX.
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
87
96
106
116
PARAMETER
forward voltage
CONDITIONS
I
F
= 0.1 A; see Fig.4
SMA BZG01 series
MAX.
1.2
V
UNIT
DIFFERENTIAL TEMPERATURE
TEST
RESISTANCE
COEFFICIENT CURRENT
r
dif
(Ω) at I
Z
TYP.
2
3
3
3
5
5
7
8
8
8
10
10
12
13
17
17
30
40
40
40
40
40
70
80
120
150
MAX.
7
8
9
10
15
15
20
24
25
25
30
30
35
40
50
50
90
115
120
125
130
135
200
250
350
450
S
Z
(%/K) at I
Z
MIN.
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
MAX.
0.09
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
I
Z
(mA)
25
20
20
20
15
15
15
10
10
10
8
8
8
8
6
6
4
4
4
4
4
4
2.7
2.7
2.7
2.7
REVERSE CURRENT
at REVERSE VOLTAGE
I
R
(µA)
MAX.
10
4
3
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
R
(V)
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
1999 Dec 23
3
Philips Semiconductors
Product specification
Voltage regulator diodes
SMA BZG01 series
TYPE
No.
SUFFIX
(1)
C120
C130
C150
C160
C180
C200
C220
C240
C270
Note
WORKING VOLTAGE
V
Z
(V) at I
Z
MIN.
114
124
138
153
168
188
208
228
251
NOM.
120
130
150
160
180
200
220
240
270
MAX.
127
141
156
171
191
212
233
256
289
DIFFERENTIAL TEMPERATURE
TEST
RESISTANCE
COEFFICIENT CURRENT
r
dif
(Ω) at I
Z
TYP.
200
250
300
350
400
500
700
800
1000
MAX.
550
700
1000
1100
1200
1500
2250
2550
3000
S
Z
(%/K) at I
Z
MIN.
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
MAX.
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
I
Z
(mA)
2
2
2
1.5
1.5
1.5
1
1
1
REVERSE CURRENT
at REVERSE VOLTAGE
I
R
(µA)
MAX.
1
1
1
1
1
1
1
1
1
V
R
(V)
91
100
110
120
130
150
160
180
200
1. To complete the type number the suffix is added to the basic type number, e.g. BZG01-C130.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
note 2
Notes
1. Device mounted on an Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of Cu-layer
≥35 µm,
see Fig.5.
2. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.5.
For more information please refer to the
‘General Part of associated Handbook’.
CONDITIONS
VALUE
30
100
150
UNIT
K/W
K/W
K/W
1999 Dec 23
4
Philips Semiconductors
Product specification
Voltage regulator diodes
GRAPHICAL DATA
SMA BZG01 series
Solid line: tie-point temperature.
Dotted line: ambient temperature; device mounted on an Al
2
O
3
PCB
as shown in Fig.5.
T
j
= 25
°C
prior to surge.
Fig.3
Fig.2
Maximum total power dissipation as a
function of temperature.
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
T
j
= 25
°C.
Dimensions in mm.
Fig.4
Forward current as a function of forward
voltage; typical values.
5
Fig.5 Printed-circuit board for surface mounting.
1999 Dec 23
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