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BYV133B-35

Description
20A, 35V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size38KB,6 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BYV133B-35 Overview

20A, 35V, SILICON, RECTIFIER DIODE

BYV133B-35 Parametric

Parameter NameAttribute value
MakerNXP
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresWITHSTAND REVERSE VOLTAGE TRANSIENTS, SURGE CAPABILITY
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.94 V
JESD-30 codeR-PSSO-G3
Maximum non-repetitive peak forward current110 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current20 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage35 V
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationSINGLE
Base Number Matches1
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
BYV133, BYV133B series
SYMBOL
QUICK REFERENCE DATA
V
R
= 35 V/ 40 V/ 45 V
a1
1
k 2
a2
3
I
O(AV)
= 20 A
V
F
0.6 V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting
plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The BYV133 series is supplied in the SOT78 conventional leaded package.
The BYV133B series is supplied in the SOT404 surface mounting package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1 (a)
cathode (k)
1
anode 2 (a)
cathode (k)
SOT78 (TO220AB)
tab
SOT404
tab
2
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
BYV133-
BYV133B-
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current (both diodes
conducting)
Repetitive peak forward
current (per diode)
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
-
-
T
mb
120 ˚C
square wave;
δ
= 0.5;
T
mb
120 ˚C
square wave;
δ
= 0.5;
T
mb
120 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; T
j
= 125 ˚C prior to
surge; with reapplied V
RRM(max)
pulse width and repetition rate
limited by T
j max
-
-
-
-
-
-
-
- 65
MIN.
35
35
35
35
35
MAX.
40
40
40
40
40
20
20
100
110
1
150
175
45
45
45
45
45
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
I
RRM
T
j
T
stg
1.
It is not possible to make connection to pin 2 of the SOT404 pckage.
May 1998
1
Rev 1.100

BYV133B-35 Related Products

BYV133B-35 BYV133B-45 BYV133B-40 BYV133-40 BYV133-35 BYV133-45
Description 20A, 35V, SILICON, RECTIFIER DIODE 20A, 45V, SILICON, RECTIFIER DIODE 20A, 40V, SILICON, RECTIFIER DIODE 20A, 40V, SILICON, RECTIFIER DIODE, TO-220AB 20A, 35V, SILICON, RECTIFIER DIODE, TO-220AB 20A, 45V, SILICON, RECTIFIER DIODE, TO-220AB
Maker NXP NXP NXP NXP NXP NXP
Reach Compliance Code compli compli compli unknow unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features WITHSTAND REVERSE VOLTAGE TRANSIENTS, SURGE CAPABILITY WITHSTAND REVERSE VOLTAGE TRANSIENTS, SURGE CAPABILITY WITHSTAND REVERSE VOLTAGE TRANSIENTS, SURGE CAPABILITY WITHSTAND REVERSE VOLTAGE TRANSIENTS, SURGE CAPABILITY WITHSTAND REVERSE VOLTAGE TRANSIENTS, SURGE CAPABILITY WITHSTAND REVERSE VOLTAGE TRANSIENTS, SURGE CAPABILITY
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-PSSO-G3 R-PSSO-G3 R-PSSO-G3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Maximum non-repetitive peak forward current 110 A 110 A 110 A 110 A 110 A 110 A
Number of components 2 2 2 2 2 2
Phase 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum output current 20 A 20 A 20 A 20 A 20 A 20 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 35 V 45 V 40 V 40 V 35 V 45 V
surface mount YES YES YES NO NO NO
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form GULL WING GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Base Number Matches 1 1 1 1 1 -
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