AP2312GN
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Capable of 2.5V gate drive
▼
Lower on-resistance
▼
Surface mount package
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
20V
50mΩ
4.3A
Description
SOT-23
G
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial
applications.
D
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@ 4.5V
Continuous Drain Current
3
, V
GS
@ 4.5V
Pulsed Drain Current
1,2
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
±12
4.3
3.4
10
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Value
Max.
90
Unit
℃/W
Data and specifications subject to change without notice
200920041
AP2312GN
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
20
-
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.02
-
-
-
-
16
-
-
-
5
1
2.3
8
9
11
2
360
75
60
1.5
Max. Units
-
-
36
50
75
1.2
-
1
10
±100
8
-
-
-
-
-
-
580
-
-
-
V
V/℃
mΩ
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=4A
V
GS
=2.5V, I
D
=3A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=4A
V
DS
=20V, V
GS
=0V
V
DS
=16V ,V
GS
=0V
V
GS
=±12V
I
D
=4A
V
DS
=16V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω,V
GS
=5V
R
D
=15Ω
V
GS
=0V
V
DS
=20V
f=1.0MHz
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Test Conditions
I
S
=1.2A, V
GS
=0V
I
S
=4A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
16
8
Max. Units
1.2
-
-
V
ns
nC
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board , t <10sec ; 270
℃/W
when mounted on Min. copper pad.
AP2312GN
12
12
T
A
=25 C
o
I
D
, Drain Current (A)
8
I
D
, Drain Current (A)
5.0V
4.5V
3.5V
2.5V
T
A
= 150
o
C
8
5.0V
4.5V
3.5V
2.5V
4
4
V
G
=2.5V
V
G
=2.5V
0
0
1
2
3
0
0
1
2
3
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
1.6
I
D
=3A
60
Normalized R
DS(ON)
T
A
=25
o
C
1.4
I
D
=4A
V
G
=5V
R
DS(ON)
(m
Ω
)
1.2
50
1.0
40
0.8
30
0
2
4
6
8
10
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
4.0
T
j
=150
o
C
2.0
T
j
=25
o
C
Normalized V
GS(th)
(V)
1.2
3.0
1.4
I
S
(A)
1.0
1.0
0.6
0.0
0
0.2
0.4
0.6
0.8
1
0.2
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP2312GN
f=1.0MHz
12
1000
I
D
=4A
V
GS
, Gate to Source Voltage (V)
10
C
iss
8
6
C (pF)
V
DS
=10V
V
DS
=12V
V
DS
=16V
100
C
oss
4
C
rss
2
0
0
2
4
6
8
10
10
1
5
9
13
17
21
25
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
10
0.2
100us
1ms
0.1
0.1
I
D
(A)
0.05
1
10ms
100ms
0.1
P
DM
0.01
t
T
0.01
Single Pulse
T
A
=25 C
Single Pulse
o
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 270℃/W
℃
1s
DC
0.01
0.1
1
10
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
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