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RSX201L-30

Description
2 A, 30 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size44KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

RSX201L-30 Overview

2 A, 30 V, SILICON, RECTIFIER DIODE

RSX201L-30 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionPMDS, 2 PIN
Contacts2
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.44 V
JESD-30 codeR-PDSO-C2
JESD-609 codee1
Maximum non-repetitive peak forward current60 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.018 µs
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperature10
RSX201L-30
Diodes
Shottky barrier diode
RSX201L-30
Application
High efficient shottky barrier diode.
Rectifier for power supply units.
Battery protection against reversal current
External dimensions
(Unit : mm)
CATHODE MARK
1.5
±
0.2
1.2
±
0.3
Features
1) Small mold type power diode (PMDS (4526) )
2) High reliability
(ESD resistance typ=22kV (machine model) )
3) Low V
F
/ Low I
R
(V
F
=0.39V at 2A / I
R
=50µA at 30V)
5 4
1
2
2.6
±
0.2
4.5
±
0.2
0.1
±
0.02
0.1
2.0
±
0.2
ROHM : PMDS
EIAJ :
1 2 Manufacturing date EX2003.9
JEDEC :
5.0
±
0.3
3.9
Structure
Silicon Epitaxial Planer
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward peak surge current (60Hz / 1cyc.)
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
O
I
FSM
Tj
Tstg
Limits
30
30
2
60
150
−40
to 150
Unit
V
V
A
A
°C
°C
Electrical characteristics
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Electro static discharge resistance
Symbol
V
F
I
R
C
T
ESD
Min.
Typ.
0.39
50
120
22
Max.
0.44
150
Unit
V
µA
pF
kV
Conditions
I
F
=2A
V
R
=30V
V
R
=10V,
f=1MHz
C=200pF, R=0Ω 1pulse
1/2

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