Standard SRAM, 64KX1, 55ns, CMOS, CDIP22,
| Parameter Name | Attribute value |
| Reach Compliance Code | unknown |
| Maximum access time | 55 ns |
| I/O type | SEPARATE |
| JESD-30 code | R-GDIP-T22 |
| memory density | 65536 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 1 |
| Number of functions | 1 |
| Number of terminals | 22 |
| word count | 65536 words |
| character code | 64000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 64KX1 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP22,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| power supply | 5 V |
| Certification status | Not Qualified |
| Filter level | 38535Q/M;38534H;883B |
| Maximum standby current | 0.02 A |
| Minimum standby current | 4.5 V |
| Maximum slew rate | 0.105 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
京公网安备 11010802033920号
EEWORLD
