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RS807

Description
8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size33KB,2 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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RS807 Overview

8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

MCC
Features
RS801
  

  
 
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RS807
8 Amp Single Phase
Bridge Rectifier
50 to 1000 Volts
RS-6
A
D
Low Leakage
Low Forward Voltage
Any Mounting Position
Silver Plated Copper Leads
Surge Overload Rating Of 300 Amps
Maximum Ratings
Operating Junction Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Microsemi
Catalog
Number
RS801
RS802
RS803
RS804
RS805
RS806
RS807
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000v
B
C
RS801
RS802
RS803
RS804
RS805
RS806
RS807
-
A
+
E
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum Forward
Voltage Drop Per
Element
I
F(AV)
I
FSM
8.0A
300A
T
A
= 65°C
8.3ms, half sine
I
H
F
G
V
F
1.1V
I
FM
= 4.0A;
T
J
= 25°C
DIM
A
B
C
D
E
F
G
H
I
DIMENSIONS
INCHES
MIN
.895
---
.660
.15∅ x
1.00
.048
.260
.180
.185
MM
MIN
22.70
---
16.80
3.8∅ x
25.40
1.20
6.60
4.60
4.70
Maximum DC
Reverse Current At
I
R
10µA
T
J
= 25°C
Rated DC Blocking
1mA
T
J
= 100°C
Voltage
*Pulse test: Pulse width 300
µsec,
Duty cycle 1%
MAX
.935
.760
.700
.23L
---
.052
.280
.220
.205
MAX
23.70
19.30
17.80
5.57L
---
1.30
7.10
5.60
5.20
NOTE
HOLE
TYP
www.mccsemi.com

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RS807 RS806 RS805 RS804 RS803 RS802 RS801
Description 8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
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