IS61VPS102436B-250B3L-TR datasheet, PDF

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IS61VPS102436B-250B3L-TR: Descriptionsram 36mb 2.5v 250mhz 1M x 36 sync sram; Categorysemiconductor Other integrated circuit (IC); File Size1MB，35 Pages; ManufacturerAll Sensors; Environmental Compliance

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IS61VPS102436B-250B3L-TR Overview

sram 36mb 2.5v 250mhz 1M x 36 sync sram

IS61VPS102436B-250B3L-TR Parametric

Parameter Name	Attribute value
Manufacture	ISSI
Product Category	SRAM
RoHS	Yes
Memory Size	36 Mbi
Organizati	1 M x 36
Access Time	2.6 ns
Supply Voltage - Max	3.3 V
Supply Voltage - Mi	2.5 V
Maximum Operating Curre	360 mA
Maximum Operating Temperature	+ 70 C
Minimum Operating Temperature	0 C
Mounting Style	SMD/SMT
Package / Case	PBGA-165
Packaging	Reel
Maximum Clock Frequency	250 MHz
Memory Type	Synchronous
Type	Pipelined SRAM

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IS61(64)LPS102436B/IS61(64)VPS/VVPS102436B

IS61(64)LPS204818B/IS61(64)VPS/VVPS204818B

1M x 36, 1M x 32, 2M x 18

36 Mb SYNCHRONOUS PIPELINED,

SINgLE CYCLE DESELECT STATIC RAM

FEATURES

• Internal self-timed write cycle

• Individual Byte Write Control and Global Write

• Clock controlled, registered address, data and

control

• Burst sequence control using MODE input

• Three chip enable option for simple depth ex-

pansion and address pipelining

• Common data inputs and data outputs

• Auto Power-down during deselect

• Single cycle deselect

• Snooze MODE for reduced-power standby

• JTAG Boundary Scan for BGA package

• Power Supply

LPS: V

3.3V (+ 5%),

ddq

3.3V/2.5V (+ 5%)

VPS: V

2.5V (+ 5%),

ddq

2.5V (+ 5%)

VVPS: V

1.8V (+ 5%),

ddq

1.8V (+ 5%)

• JEDEC 100-Pin QFP, 119-ball BGA, and 165-

ball BGA packages

• Lead-free available

AUgUST 2014

DESCRIPTION

The 36Mb product family features high-speed, low-power

synchronous static RAMs designed to provide burstable,

high-performance memory for communication and net-

working applications. The IS61LPS/VPS102436B and

IS64LPS102436B are organized as 1,048,476 words by

36 bits. The IS61LPS102432B is organized as 1,048,476

words by 32 bits. The IS61LPS/VPS204818B is organized

as 2,096,952 words by 18 bits. Fabricated with

ISSI

advanced CMOS technology, the device integrates a

2-bit burst counter, high-speed SRAM core, and high-

drive capability outputs into a single monolithic circuit. All

synchronous inputs pass through registers controlled by

a positive-edge-triggered single clock input.

Write cycles are internally self-timed and are initiated by

the rising edge of the clock input. Write cycles can be

one to four bytes wide as controlled by the write control

inputs.

Separate byte enables allow individual bytes to be written.

The byte write operation is performed by using the byte

write enable (BWE) input combined with one or more

individual byte write signals (BWx). In addition, Global

Write (GW) is available for writing all bytes at one time,

regardless of the byte write controls.

Bursts can be initiated with either ADSP (Address Status

Processor) or ADSC (Address Status Cache Controller)

input pins. Subsequent burst addresses can be gener-

ated internally and controlled by the ADV (burst address

advance) input pin.

The mode pin is used to select the burst sequence or-

der, Linear burst is achieved when this pin is tied LOW.

Interleave burst is achieved when this pin is tied HIGH

or left floating.

250

2.8

250

200

3.1

200

166

3.8

166

Units

MHz

FAST ACCESS TIME

Symbol

Parameter

Clock Access Time

Cycle Time

Frequency

liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on

any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause

failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written

assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. A

8/5/2014

IS61VPS102436B-250B3L-TR Related Products

	IS61VPS102436B-250B3L-TR	IS61VPS102436B-250TQLI-TR	IS61VVPS204818B-166B3LI-TR	IS61LPS102436B-200TQLI-TR	IS61VPS102436B-250TQLI	IS61VVPS204818B-166B3LI	IS61LPS204818B-200B3L-TR	IS61LPS102436B-200TQLI	IS61LPS204818B-200B3L	IS61VPS102436B-250B3L
Description	sram 36mb 2.5v 250mhz 1M x 36 sync sram	sram 36m, 2.5V, 250mhz sync sram	sram 36mb 2.5V 166mhz 2M x 18 sync sram	sram 36mb 200mhz 3.3V or 2.5V 1mx36 sync sram	sram 36m, 2.5V, 250mhz sync sram	sram 36mb 2.5V 166mhz 2M x 18 sync sram	sram 36mb 200mhz 3.3V or 2.5V 1mx36 sync sram	sram 36mb 200mhz 3.3V or 2.5V 1mx36 sync sram	sram 36mb 200mhz 3.3V or 2.5V 1mx36 sync sram	sram 36mb 2.5v 250mhz 1M x 36 sync sram
Manufacture	ISSI	ISSI	ISSI	ISSI	ISSI	ISSI	ISSI	ISSI	ISSI	ISSI
Product Category	SRAM	SRAM	SRAM	SRAM	SRAM	SRAM	SRAM	SRAM	SRAM	SRAM
RoHS	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes
Memory Size	36 Mbi	-	36 Mbi	36 Mbi	-	36 Mbi	36 Mbi	36 Mbi	36 Mbi	36 Mbi
Organizati	1 M x 36	-	2 M x 18	1 M x 36	-	2 M x 18	2 M x 18	1 M x 36	2 M x 18	1 M x 36
Access Time	2.6 ns	-	3.5 ns	3.1 ns	-	3.5 ns	3.1 ns	3.1 ns	3.1 ns	2.6 ns
Supply Voltage - Max	3.3 V	-	3.3 V	3.3 V	-	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Supply Voltage - Mi	2.5 V	-	2.5 V	2.5 V	-	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
Maximum Operating Curre	360 mA	-	340 mA	360 mA	-	340 mA	340 mA	360 mA	340 mA	360 mA
Maximum Operating Temperature	+ 70 C	-	+ 85 C	+ 85 C	-	+ 85 C	+ 70 C	+ 85 C	+ 70 C	+ 70 C
Minimum Operating Temperature	0 C	-	- 40 C	- 40 C	-	- 40 C	0 C	- 40 C	0 C	0 C
Mounting Style	SMD/SMT	-	SMD/SMT	SMD/SMT	-	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	PBGA-165	-	PBGA-165	TQFP-100	-	PBGA-165	PBGA-165	TQFP-100	PBGA-165	PBGA-165
Maximum Clock Frequency	250 MHz	-	166 MHz	200 MHz	-	166 MHz	200 MHz	200 MHz	200 MHz	250 MHz
Memory Type	Synchronous	-	Synchronous	Synchronous	-	Synchronous	Synchronous	Synchronous	Synchronous	Synchronous
Type	Pipelined SRAM	-	Pipelined SRAM	Pipelined SRAM	-	Pipelined SRAM	Pipelined SRAM	Pipelined SRAM	Pipelined SRAM	Pipelined SRAM

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