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RS406L

Description
4 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size24KB,2 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Environmental Compliance
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RS406L Overview

4 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

RS406L Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRectron Semiconductor
package instructionR-PSIP-W4
Contacts4
Reach Compliance Codecompli
Minimum breakdown voltage800 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PSIP-W4
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current150 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current4 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)265
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
Maximum reverse current0.00001 µA
surface mountNO
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
RS401L
THRU
RS407L
SINGLE-PHASE GLASS PASSIVATED
SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 4.0 Ampere
FEATURES
*
*
*
*
*
Ideal for printed circuit board
Surge overload rating: 200 amperes peak
Mounting position: Any
Weight: 4.8 grams
Molded structure
RS-4L
.768 (19.5)
.728 (18.5)
MECHANICAL DATA
* UL listed the recognized component directory, file #E94233
* Epoxy: Device has UL flammability classification 94V-O
.580 (14.7)
.540 (13.7)
.640 (16.3)
.600 (15.2)
AC
.052 (1.3) DIA.
.048 (1.2) TYP.
.750
(19.0)
MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
.083
(2.1)
.220 (5.6)
.180 (4.6)
.256 (6.5)
.236 (6.0)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current T
A
= 75 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating Temperature Range
Storage Temperature Range
Typical Junction Capacitance (Note)
o
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
T
J
T
STG
C
J
RS401L
50
35
50
RS402L
100
70
100
RS403L RS404L RS405L
200
140
200
400
280
400
4.0
200
-55 to + 150
-55 to + 150
40
600
420
600
RS406L
800
560
800
RS407L
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
Amps
0
0
C
C
pF
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per Bridgeat
Element at 4.0A DC
Maximum Reverse Current at Rated
Dc Blocking Voltage per element
@T
A
= 25
o
C
@T
A
= 100 C
o
SYMBOL
V
F
I
R
RS401L
RS402L
RS403L RS404L RS405L
1.0
10
1
RS406L
RS407L
UNITS
Volts
uAmps
mAmps
2001-5
NOTES : Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts

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Description 4 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 0.1A 80kV 80nS--High voltage silicon rectifier stack
Is it lead-free? Lead free Lead free Lead free -
Is it Rohs certified? conform to conform to conform to -
Maker Rectron Semiconductor Rectron Semiconductor Rectron Semiconductor -
package instruction R-PSIP-W4 R-PSIP-W4 R-PSIP-W4 -
Contacts 4 4 4 -
Reach Compliance Code compli compli compli -
Minimum breakdown voltage 800 V 1000 V 200 V -
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS -
Diode component materials SILICON SILICON SILICON -
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE -
Maximum forward voltage (VF) 1 V 1 V 1 V -
JESD-30 code R-PSIP-W4 R-PSIP-W4 R-PSIP-W4 -
JESD-609 code e3 e3 e3 -
Humidity sensitivity level 1 1 1 -
Maximum non-repetitive peak forward current 150 A 150 A 150 A -
Number of components 4 4 4 -
Phase 1 1 1 -
Number of terminals 4 4 4 -
Maximum operating temperature 150 °C 150 °C 150 °C -
Minimum operating temperature -55 °C -55 °C -55 °C -
Maximum output current 4 A 4 A 4 A -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR -
Package form IN-LINE IN-LINE IN-LINE -
Peak Reflow Temperature (Celsius) 265 265 265 -
Certification status Not Qualified Not Qualified Not Qualified -
Maximum repetitive peak reverse voltage 800 V 1000 V 200 V -
Maximum reverse current 0.00001 µA 0.00001 µA 0.00001 µA -
surface mount NO NO NO -
Terminal surface MATTE TIN Matte Tin (Sn) MATTE TIN -
Terminal form WIRE WIRE WIRE -
Terminal location SINGLE SINGLE SINGLE -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
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