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RS2B

Description
1.5 A, 100 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size44KB,2 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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RS2B Overview

1.5 A, 100 V, SILICON, RECTIFIER DIODE

RS2B Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typerectifier diode
applicationEFFICIENCY
Phase1
Maximum reverse recovery time0.1500 us
Maximum repetitive peak reverse voltage100 V
Maximum average forward current1.5 A
Maximum non-repetitive peak forward current50 A
RS2A/A - RS2M/A
1.5A SURFACE MOUNT FAST RECOVERY RECTIFIER
Features
·
·
·
·
·
·
Glass Passivated Die Construction
Fast Recovery Time For High Efficiency
Low Forward Voltage Drop and High Current
Capability
Surge Overload Rating to 50A Peak
Ideally Suited for Automated Assembly
Plastic Material: UL Flammability
Classification Rating 94V-0
SMA
SMB
Min
3.30
4.06
1.96
0.15
5.00
0.10
0.76
2.00
Max
3.94
4.57
2.21
0.31
5.59
0.20
1.52
2.62
B
Dim
A
B
C
D
E
G
H
Min
2.29
4.00
1.27
0.15
4.80
0.10
0.76
2.01
Max
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
A
C
Mechanical Data
·
·
·
·
·
·
·
Case: Molded Plastic
Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
SMA Weight: 0.065 grams (approx.)
SMB Weight: 0.09 grams (approx.)
Mounting Position: Any
Marking: Type Number
J
D
H
G
E
J
All Dimensions in mm
AA, BA, DA, GA, JA, KA, MA Suffix Designates SMA Package
A, B, D, G, J, K Suffix Designates SMB Package
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
T
= 120°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
at Rated DC Blocking Voltage
Reverse Recovery Time (Note 3)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance, Junction to Terminal (Note 1)
Operating and Storage Temperature Range
@ I
F
= 1.5A
@ T
A
= 25°C
@ T
A
= 125°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
C
j
R
qJT
T
j,
T
STG
RS2
A/AA
50
35
T
A
= 25°C unless otherwise specified
RS2
B/BA
100
70
RS2
D/DA
200
140
RS2
G/GA
400
280
1.5
50
1.3
5.0
200
RS2
J/JA
600
420
RS2
K/KA
800
560
RS2
M/MA
1000
700
Unit
V
V
A
A
V
mA
150
30
20
-65 to +150
250
500
ns
pF
K/W
°C
Notes:
1. Thermal Resistance: Junction to terminal, unit mounted on PC board with 5.0 mm
2
(0.013 mm thick) copper pads as heat sink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Reverse Recovery Test Conditions: I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See Figure 5.
DS15004 Rev. E-2
1 of 2
RS2A/A - RS2M/A

RS2B Related Products

RS2B RS2KA RS2K RS2JA RS2J RS2GA RS2G RS2DA RS2D RS2BA
Description 1.5 A, 100 V, SILICON, RECTIFIER DIODE 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AC 1.5 A, 800 V, SILICON, RECTIFIER DIODE 1.5 A, 600 V, SILICON, RECTIFIER DIODE 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AC 1.5 A, 400 V, SILICON, RECTIFIER DIODE 1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AC 1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC

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