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8403610JA

Description
sram 2kx8 async 5.0V low power sram
Categorysemiconductor    Other integrated circuit (IC)   
File Size107KB,11 Pages
ManufacturerIDT (Integrated Device Technology, Inc.)
Websitehttp://www.idt.com/
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8403610JA Overview

sram 2kx8 async 5.0V low power sram

8403610JA Parametric

Parameter NameAttribute value
ManufactureIDT (Integrated Device Technology)
Product CategorySRAM
RoHSN
Memory Size16 kbi
Organizati2 k x 8
Access Time55 ns
InterfaceParallel
Supply Voltage - Max5.5 V
Supply Voltage - Mi4.5 V
Maximum Operating Curre95 mA
Maximum Operating Temperature+ 125 C
Minimum Operating Temperature- 55 C
Mounting StyleThrough Hole
Package / CaseCDIP-24
PackagingTube
Memory TypeAsynchronous
Factory Pack Quantity15
TypeAsynchronous Static RAM
CMOS Static RAM
16K (2K x 8-Bit)
Features
Description
IDT6116SA
IDT6116LA
High-speed access and chip select times
– Military: 20/25/35/45/55/70/90/120/150ns (max.)
– Industrial: 20/25ns (max.)
– Commercial: 15/20/25ns (max.)
Low-power consumption
Battery backup operation
– 2V data retention voltage (LA version only)
Produced with advanced CMOS high-performance
technology
CMOS process virtually eliminates alpha particle soft-error
rates
Input and output directly TTL-compatible
Static operation: no clocks or refresh required
Available in ceramic 24-pin DIP, ceramic and plastic 24-pin Thin
Dip and 24-pin SOIC
Military product compliant to MIL-STD-833, Class B
The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized
as 2K x 8. It is fabricated using high-performance, high-reliability CMOS
technology.
Access times as fast as 15ns are available. The circuit also offers a
reduced power standby mode. When
CS
goes HIGH, the circuit will
automatically go to, and remain in, a standby power mode, as long as
CS
remains HIGH. This capability provides significant system level power and
cooling savings. The low-power (LA) version also offers a battery backup
data retention capability where the circuit typically consumes only 1µW to
4µW operating off a 2V battery.
All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully
static asynchronous circuitry is used, requiring no clocks or refreshing for
operation.
The IDT6116SA/LA is packaged in 24-pin 300mil plastic DIP, 24-pin
600mil and 300mil ceramic DIP, or 24-lead gull-wing SOIC providing high
board-level packing densities.
Military grade product is manufactured in compliance to MIL-STD-883,
Class B, making it ideally suited to military temperature applications
demanding the highest level of performance and reliability.
Functional Block Diagram
A
0
V
CC
ADDRESS
DECODER
A
10
128 X 128
MEMORY
ARRAY
GND
I/O
0
INPUT
DATA
CIRCUIT
I/O
7
I/O CONTROL
,
CS
OE
WE
CONTROL
CIRCUIT
3089 drw 01
FEBRUARY 2013
1
©2013 Integrated Device Technology, Inc.
DSC-3089/08
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