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RS1G

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size164KB,2 Pages
ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.
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RS1G Overview

SIGNAL DIODE

RS1G Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSignal diode
CE
CHENYI ELECTRONICS
RS1A THRU RS1K
SURFACE MOUNT GALSS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage - 50 to 800 Volts
Forward Current - 1.0Ampere
FEATURES
. For surface mounted applications
. Low profile package
. Built-in strain relief , ideal for automated placement
. Fast switching speed
. Plastic package has Underwrites Laboratory Flammability
Classification 94V-0
. Glass passivated chip junction
. High temperature soldering guaranteed: 250
/10 seconds, at terminals
MECHANICAL DATA
.
Case:
JEDEC SMA(DO-214AC) molded plastic
.
Terminals:
Plated axial leads,solderable per MIL-STD-750,method 2026
.
Polarity:
Color band denotes cathode end
.
Weight
: 0.002 ounce, 0.064 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25
ambient temperature unless otherwise specified,Single phase,half wave 60Hz,resistive or inductive)
load. For capacitive load,derate current by 20%)
Symbols
Maximum Recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
current of T
L
=90
Peak forward surge current (8.3ms single half
sing wave superimposed on rated load
(JEDEC method) at
T
L
=90
Maximum instantaneous forward voltage at 1.0 A
Maximum reverse recovery time(Note 1)
current at rated DC Blocking Voltage
Typical Thermal Resistance( Note 3)
Typical reverse recovery time(Note 2)
Operating and storage temperature range
T
A
=25
T
A
=125
R
R
Trr
T
J
T
STG
JL
JA
RS1A
50
35
50
RS1B
100
70
100
RS1D
200
140
200
1.0
RS1G
400
280
400
RS1J
600
420
600
RS1K
800
560
800
Units
Volts
Volts
Volts
Amp
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
30.0
Amps
V
F
I
R
1.30
5.0
Volts
A
50
27.0
25.0
150.0
-55 to +150
30.0
/W
85.0
250
500
nS
Notes:
1.Test conditions:IF=0.5A,IR=1.0A,Irr=0.25A.
2.Measured at 1MHz and applied reverse voltage of 4.0 Volts.
3.Thermal resistance from junction to ambient and from junction to lead mounted on PCB mounted on
0.2 X 0.2"(5.0 X 5.0mm) copper pad areas.
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 2

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