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IS61LP6436A-133TQLI-TR

Description
sram 2mb 64kx36 133mhz sync sram 3.3v
Categorysemiconductor    Other integrated circuit (IC)   
File Size375KB,20 Pages
ManufacturerAll Sensors
Environmental Compliance  
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IS61LP6436A-133TQLI-TR Overview

sram 2mb 64kx36 133mhz sync sram 3.3v

IS61LP6436A-133TQLI-TR Parametric

Parameter NameAttribute value
ManufactureISSI
Product CategorySRAM
RoHSYes
Memory Size2 Mbi
Organizati64 k x 32
Access Time4 ns
InterfaceParallel
Supply Voltage - Max3.465 V
Supply Voltage - Mi3.135 V
Maximum Operating Curre190 mA
Maximum Operating Temperature+ 85 C
Minimum Operating Temperature- 40 C
Mounting StyleSMD/SMT
Package / CaseTQFP-100
PackagingReel
Maximum Clock Frequency133 MHz
Factory Pack Quantity800
TypeSynchronous
IS61NLP6432A
IS61NLP6436A/IS61NVP6436A
IS61NLP12818A/IS61NVP12818A
64K x 32, 64K x 36, and 128K x 18
2Mb, PIPELINE 'NO WAIT' STATE BUS SRAM
PRELIMINARY INFORMATION
SEPTEMBER 2005
FEATURES
• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single R/W (Read/Write) control pin
• Clock controlled, registered address,
data and control
DESCRIPTION
The 2 Meg 'NLP/NVP' product family feature high-speed,
low-power synchronous static RAMs designed to provide
a burstable, high-performance, 'no wait' state, device for
networking and communications applications. They are
organized as 64K words by 32 bits, 64K words by 36
bits, and 128K words by 18 bits, fabricated with
ISSI
's
advanced CMOS technology.
Incorporating a 'no wait' state feature, wait cycles are
eliminated when the bus switches from read to write, or
write to read. This device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs
into a single monolithic circuit.
All synchronous inputs pass through registers are controlled
by a positive-edge-triggered single clock input. Operations
may be suspended and all synchronous inputs ignored
when Clock Enable, CKE is HIGH. In this state the internal
device will hold their previous values.
All Read, Write and Deselect cycles are initiated by the ADV
input. When the ADV is HIGH the internal burst counter
is incremented. New external addresses can be loaded
when ADV is LOW.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock inputs and when WE is LOW.
Separate byte enables allow individual bytes to be written.
A burst mode pin (MODE) defines the order of the burst
sequence. When tied HIGH, the interleaved burst sequence
is selected. When tied LOW, the linear burst sequence is
selected.
• Interleaved or linear burst sequence control us-
ing MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Power Down mode
• Common data inputs and data outputs
• CKE pin to enable clock and suspend operation
• JEDEC 100-pin TQFP package
• Power supply:
NVP: V
dd
2.5V (± 5%), V
ddq
2.5V (± 5%)
NLP: V
dd
3.3V (± 5%), V
ddq
3.3V/2.5V (± 5%)
• Industrial temperature available
• Lead-free available
FAST ACCESS TIME
Symbol
t
kq
t
kc
Parameter
Clock Access Time
Cycle Time
Frequency
-250
2.6
4
250
-200
3.1
5
200
Units
ns
ns
MHz
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00A
08/31/05
1

IS61LP6436A-133TQLI-TR Related Products

IS61LP6436A-133TQLI-TR IS61LP6432A-133TQLI-TR IS61NLP6432A-200TQLI-TR IS61LP6436A-133TQLI
Description sram 2mb 64kx36 133mhz sync sram 3.3v sram 2mb 64kx32 133mhz sync sram 3.3v sram 2mb 64kx32 200mhz sync sram 3.3v sram 2mb 64kx36 133mhz sync sram 3.3v
Manufacture ISSI ISSI ISSI ISSI
Product Category SRAM SRAM SRAM SRAM
RoHS Yes Yes Yes Yes
Memory Size 2 Mbi 2 Mbi 2 Mbi 2 Mbi
Organizati 64 k x 32 64 k x 32 64 k x 32 64 k x 32
Access Time 4 ns 4 ns 3.1 ns 4 ns
Interface Parallel Parallel Parallel Parallel
Supply Voltage - Max 3.465 V 3.465 V 3.465 V 3.465 V
Supply Voltage - Mi 3.135 V 3.135 V 3.135 V 3.135 V
Maximum Operating Curre 190 mA 190 mA 210 mA 190 mA
Maximum Operating Temperature + 85 C + 85 C + 85 C + 85 C
Minimum Operating Temperature - 40 C - 40 C - 40 C - 40 C
Mounting Style SMD/SMT SMD/SMT SMD/SMT SMD/SMT
Package / Case TQFP-100 TQFP-100 TQFP-100 TQFP-100
Packaging Reel Reel Reel Tube
Maximum Clock Frequency 133 MHz 133 MHz 200 MHz 133 MHz
Factory Pack Quantity 800 800 800 72
Type Synchronous Synchronous Synchronous Synchronous

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