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RS1B

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size68KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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RS1B Overview

SIGNAL DIODE

RS1B Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSIGNAL DIODE
RS1A THRU RS1K
SURFACE MOUNT FAST SWITCHING RECTIFIER
Reverse Voltage -
50 to 800 Volts
DO-214AC
MODIFIED J-BEND
Forward Current -
1.0 Ampere
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications in order to optimize
board space
Low profile package
Built-in strain relief, ideal for
automated placement
Fast switching for high efficiency
Glass passivated chip junction
High temperature soldering:
250°C/10 seconds at terminals
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.090 (2.29)
0.078 (1.98)
MECHANICAL DATA
0.008 (0.203) MAX.
0.208 (5.28)
0.194 (4.93)
0.060 (1.52)
0.030 (0.76)
Dimensions are in inches and (millimeters)
Case:
JEDEC DO-214AC molded plastic over
passivated chip
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Weight:
0.002 ounce, 0.064 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS RS1A
RS1B
RB
RS1D
RD
RS1G
RG
RS1J
RJ
RS1K
RK
UNITS
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=90°C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) T
L
=90°C
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Maximum thermal resistance
T
A
=25°C
T
A
=125°C
(NOTE 1)
(NOTE 2)
(NOTE 3)
RA
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
1.0
400
280
400
600
420
600
800
500
800
Volts
Volts
Volts
Amp
I
FSM
V
F
I
R
t
rr
C
J
R
ΘJA
R
ΘJL
T
J
, T
STG
30.0
1.30
5.0
50.0
150
10.0
105.0
32.0
-55 to +150
250
7.0
Amps
Volts
µA
ns
pF
°C/W
°C
Operating junction and storage temperature range
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead mounted on
P.C.B. with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas
4/98

RS1B Related Products

RS1B RS1K RS1J RS1G RS1D RS1A
Description SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC SIGNAL DIODE SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC 0.7 A, SILICON, SIGNAL DIODE
state ACTIVE ACTIVE ACTIVE ACTIVE - ACTIVE
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