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RS1A

Description
0.7 A, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size263KB,2 Pages
ManufacturerDCCOM [ DC COMPONENTS ]
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RS1A Overview

0.7 A, SILICON, SIGNAL DIODE

RS1A Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionAXIAL PACKAGE-2
stateACTIVE
packaging shapeROUND
Package SizeLONG FORM
Terminal formWIRE
terminal coatingTIN LEAD
Terminal locationAXIAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionISOLATED
Diode component materialsSILICON
Diode typeSIGNAL DIODE
Maximum reverse recovery time1.5 us
Maximum average forward current0.7000 A
DC COMPONENTS CO., LTD.
R
RS1A
THRU
RS1M
RECTIFIER SPECIALISTS
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT FAST RECOVERY RECTIFIER
VOLTAGE RANGE - 50 to 1000 Volts
CURRENT - 1.0 Ampere
FEATURES
* ldeal for surface mounted applications
* Low leakage current
* Glass passivated junction
SMA ( DO-214AC )
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
*Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
* Polarity: As marked
* Mounting position: Any
* Weight: 0.064 gram
.062(1.60)
.055(1.40)
.181(4.60)
.157(4.00)
.114(2.90)
.098(2.50)
.096(2.44)
.078(2.00)
.060(1.52)
.030(.76)
.208(5.28)
.188(4.80)
.008(0.203)
.002(0.051)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at T
A
= 55
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Forward Voltage at 1.0A DC
Maximum DC Reverse Current at
Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 3)
Maximum Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
@T
A
= 25
o
C
@T
A
= 125 C
o
V
RRM
V
RMS
V
DC
I
O
I
FSM
V
F
I
R
trr
RθJL
C
J
T
J
, T
STG
RS1A
50
35
50
RS1B
100
70
100
RS1D
200
140
200
RS1G
400
280
400
1.0
30
1.3
5.0
150
RS1J
600
420
600
RS1K
800
560
800
RS1M
UNITS
1000
Volts
700
1000
Volts
Volts
Amps
Amps
Volts
uAmps
150
30
15
-65 to + 175
250
500
nSec
0
C/ W
pF
0
C
NOTES : 1. Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
2. Thermal Resistance (Junction to Ambient), .24in
2
(6.0mm
2
) copper pads to each terminal.
3. Test Conditions: IF = 0.5A, IR = 1.0A, IRR = 0.25A
332

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Description 0.7 A, SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC SIGNAL DIODE SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC SIGNAL DIODE
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Diode type SIGNAL DIODE Signal diode SIGNAL DIODE Signal diode Signal diode - SIGNAL DIODE
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