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RS602

Description
6 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size50KB,2 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
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RS602 Overview

6 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

RS602 Parametric

Parameter NameAttribute value
MakerLRC
Reach Compliance Codeunknow
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current200 A
Number of components4
Maximum operating temperature125 °C
Maximum output current6 A
Maximum repetitive peak reverse voltage100 V
surface mountNO
LESHAN RADIO COMPANY, LTD.
RS601 – RS607
KBU601 – KBU607
6.0A
6.0A BRIDGE RECTIFIERS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase,half wave,
60Hz,resistive or inductive load. For capacitive load,derate current by 20%.
Maximum
Peak
TYPE
Reverse
Voltage
PRV
V
PK
Maximum
Maximum
Average Forward Peak
Forward
Surge Current
Output
@ 8.3ms
Current
@T
A
=70°C Superimposed
I
O
Maximum DC
Forward Voltage
drop per element
at I
F
=3.0ADC
V
F
V
PK
Maximum DC
Reverse Current
at rated DC
Blocking Voltage
per element
I
R
25°CTA
µADC
125°CTA
µADC
Operating
Junction
Temperature
Package
Dimensions
I
FM
(Surge)
A
PK
T
J
°C
A
AV
RS601
RS602
RS603
RS604
RS605
RS606
RS607
KBU601
KBU602
KBU603
KBU604
KBU605
KBU606
KBU607
50
100
200
400
600
800
1000
6.0
200
1.1
10
500
125
RS – 6
.935(23.7)
.895(22.7)
.15
φ
± .23L
13.8
φ
± 5.7L
HOLE THRU
.15
.300
(7.5)
.780(19.8)
.740(18.8)
.700(17.8)
.600(16.8)
1.00 MIN
(25.4)
.052(1.3) DIA
.048(1.2)
.220(5.6)
.180(4.6)
.079(2.0)
.087(2.2)
.280(7.1)
.268(6.8)
RS – 6
10C–1/2

RS602 Related Products

RS602 RS607 RS606 RS605 RS604 RS603 KBU606 KBU601
Description 6 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, SILICON, BRIDGE RECTIFIER DIODE 6 A, SILICON, BRIDGE RECTIFIER DIODE 6 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
Maker LRC LRC LRC LRC LRC LRC LRC LRC
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknown
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
Maximum non-repetitive peak forward current 200 A 200 A 200 A 200 A 200 A 200 A 200 A 200 A
Number of components 4 4 4 4 4 4 4 4
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Maximum output current 6 A 6 A 6 A 6 A 6 A 6 A 6 A 6 A
Maximum repetitive peak reverse voltage 100 V 1000 V 800 V 600 V 400 V 200 V 800 V 50 V
surface mount NO NO NO NO NO NO NO NO
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