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IS61NLF51236-7.5TQLI-TR

Description
sram 18m (512kx36) 7.5ns sync sram 3.3v
Categorysemiconductor    Other integrated circuit (IC)   
File Size452KB,35 Pages
ManufacturerAll Sensors
Environmental Compliance  
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IS61NLF51236-7.5TQLI-TR Overview

sram 18m (512kx36) 7.5ns sync sram 3.3v

IS61NLF51236-7.5TQLI-TR Parametric

Parameter NameAttribute value
ManufactureISSI
Product CategorySRAM
RoHSYes
Memory Size18 Mbi
Access Time7.5 ns
Supply Voltage - Max3.465 V
Supply Voltage - Mi3.135 V
Maximum Operating Curre475 mA
Maximum Operating Temperature+ 85 C
Minimum Operating Temperature- 40 C
Mounting StyleSMD/SMT
Package / CaseTQFP-100
PackagingReel
Maximum Clock Frequency117 MHz
Factory Pack Quantity800
TypeSynchronous
IS61NLF25672/IS61NVF25672
IS61NLF51236/IS61NVF51236
IS61NLF102418/IS61NVF102418
NOVEMBER 2013
256K x 72, 512K x 36 and 1M x 18
18Mb, FLOW THROUGH 'NO WAIT' STATE BUS SRAM
FEATURES
• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single Read/Write control pin
• Clock controlled, registered address,
data and control
DESCRIPTION
The 18 Meg 'NLF/NVF' product family feature high-speed,
low-power synchronous static RAMs designed to provide
a burstable, high-performance, 'no wait' state, device
for networking and communications applications. They
are organized as 256K words by 72 bits, 512K words
by 36 bits and 1M words by 18 bits, fabricated with
ISSI
's
advanced CMOS technology.
Incorporating a 'no wait' state feature, wait cycles are
eliminated when the bus switches from read to write, or
write to read. This device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs
into a single monolithic circuit.
All synchronous inputs pass through registers are controlled
by a positive-edge-triggered single clock input. Operations
may be suspended and all synchronous inputs ignored
when Clock Enable,
CKE is HIGH. In this state the internal
device will hold their previous values.
All Read, Write and Deselect cycles are initiated by the ADV
input. When the ADV is HIGH the internal burst counter
is incremented. New external addresses can be loaded
when ADV is LOW.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock inputs and when
WE is LOW.
Separate byte enables allow individual bytes to be written.
A burst mode pin (MODE) defines the order of the burst
sequence. When tied HIGH, the interleaved burst sequence
is selected. When tied LOW, the linear burst sequence is
selected.
• Interleaved or linear burst sequence control us-
ing MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Power Down mode
• Common data inputs and data outputs
CKE
pin to enable clock and suspend operation
• JEDEC 100-pin TQFP, 165-ball PBGA and 209-
ball (x72) PBGA packages
• Power supply:
NVF: V
dd
2.5V (± 5%), V
ddq
2.5V (± 5%)
NLF: V
dd
3.3V (± 5%), V
ddq
3.3V/2.5V (± 5%)
• JTAG Boundary Scan for PBGA packages
• Industrial temperature available
• Lead-free available
FAST ACCESS TIME
Symbol
t
kq
t
kc
Parameter
Clock Access Time
Cycle Time
Frequency
6.5
6.5
7.5
133
7.5
7.5
8.5
117
Units
ns
ns
MHz
Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liabil-
ity arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause
failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written
assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. E
10/25/2013
1

IS61NLF51236-7.5TQLI-TR Related Products

IS61NLF51236-7.5TQLI-TR IS61NVF51236-6.5TQL IS61NLF102418-7.5TQLI IS61NVF51236-6.5TQL-TR IS61NLF102418-7.5TQLI-TR IS61NLF51236-7.5TQLI
Description sram 18m (512kx36) 7.5ns sync sram 3.3v sram 18mb (512kx36) 6.5ns sync sram 2.5v sram 18mb, 3.3v, 7.5ns 1mb x 18 sync sram sram 18mb (512kx36) 6.5ns sync sram 2.5v sram 18mb, 3.3v, 7.5ns 1mb x 18 sync sram sram 18m (512kx36) 7.5ns sync sram 3.3v
Manufacture ISSI ISSI ISSI ISSI ISSI ISSI
Product Category SRAM SRAM SRAM SRAM SRAM SRAM
Packaging Reel Tray Tray Reel Reel Tray
Factory Pack Quantity 800 72 72 800 800 72
Memory Size 18 Mbi 18 Mbi 18 Mbi - 18 Mbi 18 Mbi
Access Time 7.5 ns 6.5 ns 7.5 ns - 7.5 ns 7.5 ns
Supply Voltage - Max 3.465 V 2.625 V 3.3 V - 3.3 V 3.465 V
Supply Voltage - Mi 3.135 V 2.375 V 2.5 V - 2.5 V 3.135 V
Maximum Operating Curre 475 mA 450 mA 425 mA - 425 mA 475 mA
Maximum Operating Temperature + 85 C + 70 C + 70 C - + 70 C + 85 C
Minimum Operating Temperature - 40 C 0 C 0 C - 0 C - 40 C
Mounting Style SMD/SMT SMD/SMT SMD/SMT - SMD/SMT SMD/SMT
Package / Case TQFP-100 TQFP-100 TQFP-100 - TQFP-100 TQFP-100
Maximum Clock Frequency 117 MHz 133 MHz 117 MHz - 117 MHz 117 MHz
Type Synchronous Synchronous Synchronous Flow-Through SRAM - Synchronous Flow-Through SRAM Synchronous
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