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BZV47C10

Description
2W ZENER DIODES
CategoryDiscrete semiconductor    diode   
File Size56KB,4 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

BZV47C10 Overview

2W ZENER DIODES

BZV47C10 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
package instructionO-PALF-W2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance4 Ω
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation2 W
Certification statusNot Qualified
Nominal reference voltage10 V
Maximum reverse current5 µA
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Voltage temperatureCoeff-Max5.5 mV/°C
Maximum voltage tolerance5%
Working test current50 mA
®
BZV47C5V1
/
200
2W ZENER DIODES
FEATURES
VOLTAGE RANGE : 5.1 V to 200 V
HERMETICALLY SEALED PLASTIC CASE :
F126 PACKAGE
HIGH SURGE CAPABILITY : 55 W (10 ms) .
DESCRIPTION
2 W silicon Zener diodes.
F126
ABSOLUTE RATINGS
(Tamb = 25°C)
Symbol
P
T
stg
T
j
T
L
Parameter
Value
T
amb
= 55°C
2
- 65 to + 175
175
230
Unit
W
°
C
°C
°C
Power dissipation on infinite heatsink
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10s at 5mm
from case
THERMAL RESISTANCES
Symbol
R
th
(j-l)
R
th
(j-a)
Parameter
Value
60
100
Unit
°C/W
°C/W
Junction to lead
Junction to ambient on printed circuit on recommended pad
layout
January 1998 Ed : 2
1/4

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