b
mxdt-ll?
q
q
1
IuuTNu
I
rncI?IcMIm
Cman’mf
(
nQam=)
Rs19rom,
mm,
!MB
mec
Ificctim
18 mmlstom
all
forlasetzv
Demrt=m
ta
1.
SCCPE
ixuulated,
e
mixture
insuhtlng-mterld, mnd suiUble blndem ~ efthermlded
together
or
appliede8 8 thin layer of co!dhct~ M**
On an In9ulmtedfoxm. ‘l!heofi
re-
sIstorsare capableof U- lmd opemtion at an adbienttmpemtu.re of 70””
(see
table I).
1.2 Claa8ification.
dea~tlm
8haJl be in the
?Ouomrlg
o;
c&n,
T
?
?
~
~tic
K
A
Style
I
IWtdaxice
(1.2.1.3)
(1.2.1.1)
(1.2.1.2)
&s
Mi6nce
tolmmnce
(1.2.1.4)
T
;,
1.2.1.1
style.
Zhe 8tyle Is Murttfiad by the two-letter
-l
‘W”
folLm@
by
a -digit
-r;
the &tter8 Menti& Za8uhM,
~ltlom
flsd re-
Idexstifiea size ad paw ratingof the resls’%ms.
the
sistors,d
the
-r
1 .201.2
Qaamcteriatfc. the ~terlstic
Is
identiflel by m
-letter
-1;
the fimt letter idmtlfles tie udmm
arbient-tmperatw cha.mcteriat
1c
in accordance
vlth table I, ukl the secml letterident
ifles the reslstance-
tempemture chamcterlstlc h acco~e
titi -b
n b
w-:
I
e
TABU
1. MRx”- w?lbien*t mpemture
ctiteristico
*
G---
%
I
‘MBIz
n,.
mture
chamcteristic.
Resi8txLnce-tmPe
mxlmm~b-ti
residxmce from xw8i8taace
at ambient-~m=
Of
25°C
?l~
resMance
@mtml P
At
-55-C
(4ulbiexlt
)
At
105”C
(Iudmat)
41
ciiul13
?&gssLfa
EszsEdQ
1,100
to
Io,ooo) Incl -
i
,
1
•~ ~ -~ ~el ~-,
I$)wuu
Inch.--””””””
‘, OOOtLndlKder
----
6.5
10
5
6
7.5
13
i
0011
to
1.0,
Incl - - - m
-
l.l to lo,
ticl.
---
a
llmd over ------
I
15
20
25
10
15
15
Decadefor
Electronic
Cap9aents
of 5-, M-, w
The resist48ce
with table III.
1.2.
i.4 Resi-ce
tolerance.
h ecco*e
by
q
single ht*r
)
2
Iabl+ll
P
specifiedherein.
mEmmATIcx’lS
PPP-1395645-
Ikmes, ?Wding,
Paperboard.
PPP-B-636
-
Box, ?iberM.
~.&~76
-
Poxe-:
s-q
PPP-*60
-
IhLpe :
Rwsur*Sen8 it
ive
AUhesive,Wte-
proof,
lb P@a@x.
PPP+76
-
mpe,
Preesur~SensitiveMbe81Ve, Paper,
(for ~
SeaMng).
q
ruumxr
MI~P-116
KUAW+5662
14thodsof.
- lhserwktl.on,
- Wibmt ion Systm Req~ts.
(See mpplanmlt 1 for llst of a~llcable detailupeclf@8tim. )
mUz!ARY
BULAZD-105 -
Su@*
~
Pmcdures
ud ‘Mble8
for In8pemm
Atiributas.
K5sm-12g
“
kklqg
lmAnHo2
mP9m221
-
-
?Or
ml=
ad Stomgeo
Zw’t Mthods for a3em’oQic lud KLectriodl
@m==t
M%s
for
,
(Mm
Me
Resistors.
w-
3
.
9
8
KWR-lIP
specifications
for individual
resistortypes. M*11 requirements
or exceptions
applicableto
hdivi&al types
Of
=sistors shaU be as specified
in
the detail spec
iflcat
ions. In the event of my conflict
betveen
requirements
and the detail specifications,
the latter ahaU govern
of
this
specification
(see 6.1);
3.1
Detail
3.2
Qmlificatioa. Resistors~iahed
under thi8
qwcifkation
shall be
pmlucts vhlch are qualifiedfor list- on the applicablegualifialproducts
list at tie t-
set for opening of bids (see 4.4 and
6.2).
q
The
mterlal shaU be as specifiedherein. Eoutver,uhen a
def
lnit~hl
is xwt spec
ifled, a xmterid ~
be used uhich vtU enable
the resistxxsto met tie perf
Cmmnce requimmnts of this 8peclf
teat
ion.
Constituent
=terid
-
not be Ccm8txued as
a
Acceptanceor appxwd
of w
guanmty of the accep-ce
of the
finishedproduct.
3.3
M3terial.
3.4 Desi~ and comtmction. ResistorsA&U be of the desig, construction,
resistorshall consistof a
md physicaldimensionsspecified(see j.1). =*
composit ori
I
resistanceeiementprotectedagaimt
exposure of
humidityml
tempemture conditionsby an enclosure
or
a
coatingof misture-resistant,in-
dating
rmterlal.
3.4.1
!l’’mainal.s.
soldering.
tate
AU
tennina.k shaU be suitablytreatedto facili
IWlstors shti have
a
pover mting a8 specified(see 3.1),
3.5 Pcwer mt~
of ~°C. mis
based on centinuous”
fill-l- opemtion
q
t en ambient~rature
paver
mting is dependenton
the
abllityof resistorsto met the applicable
life requirements
specifiedm 3.16. For resistorsopemted at *lent tempem-
ture in excess of ~°C, the H
W
be demti ~ =co*e
fi~ the ~Peci-
fled cuzwe (see 3.1)0
ResistorsshaU have a mted direct-current
(dc) con-
e
3.6 Volta% mt~
tinuousworking vol&e or an appmx-te
sime-vavemot-~squwe
(ms )
id-line-frequency
altemat lng current (ac) centimous uorldmgvoltageat ~rc
arxl
vaveformcomespondlng to the pwer mtimg, as detezmllMdfrm the followimg
fonmlla :
E
‘F
Where:
UOrkh)g llde
E . mtd &
or
IW
u
cmtlmmls
~rcial”llne
f
~eMy
d
ImVefoma
P =
Pover
mtiag (8ee
3.1).
resistance (see
301)0
R - lladnal
at
In
no m9e
ahaU
the
mted
tic
or
m ac
contixwms
wrkixig
vol~
IV).
the appl$cabb w-
tiue (see
3.1 and Mle
be
~ter
than
)
v
lb
,,
—rr– —-—
-
--.
,___
l-- .. ------
... .
-R-II?
‘MEIS
IV.
IbXiaam
Corrtixulous
uoru
vol~.
Puwr mt~
ktts
lfman
N/O
””-----
I
I
MC@
Caltimm,
Wrking volts@
(* or m)
MM
I/
b----
-------
l/2 -----------
09-90-
1 9-999-
2 ------------
!
toleme
2
w
m
1~
3Z
3.7
DC xwiStanCe.
I&Ian ZWIJWNS WI tested
M specified
b
4.6.2,
resistance
abs4U be within
(see 1.2. IJ$).
the qmcifiad
of the ~
the dc
m8i8tance
3.8
ksistance—tempemtum ~terist
Ic. When realstoram
te6ted u
referred to m
Specwled in ~.6.3,the change in
resistance at any t~mture,
of 25“C, s.ti not exceed the lisitsspecifid for the
ambient tanpemture
applicable~emture
and renietancevkiues specif~edin table ~. The change
in mslutance at the ixrtemmdiate
tapemtures ahaU mt exceed a value pmpo~
tional to tie mx~
values specifiedin table II.
)
w
3.9
voltage coeff
Icknt (applicable
only to reaMm8
of 1@O dm -
over~o
~nmts
When
resistorsare tested aa specifiedin 4.6.4, vol~coeff%ciart
which result h
a total resistiince change d
sidered
aat
Iafactory.
s
Hovever,
mt
percent-or lam shall be con-
if the change 18 ~ter
than
2 percent,
the
per volt,
for
resistors
voltage coefliciat
axcaed 0.05
percent
xuted
0.035 percent per ht for maistors ruted
q
t 1A d
watt, and O.@ percentper volt for mU Istorsrated above 1/2 ~tt.
at
1/10 and
1/8 watt,
1/2
3.10
Dielectricwi~
VO1*- “ when re8i8tormam tlwted as q)eclfled
h 4.6.5,
there shgiu be m
qvikac
e of mechsn’~
~,
amiag$
or
bmmkkwn.
3.11 ~tlon
re8i8tarweo when lw9iartors testeuu
am
the
Imitation resistanceshall be not Uss thm 10,~ ~.
3.12
4.6.7,
8peciftd la
4.6.6,
~t~mture
mexm
tion, U&
msinlera am tea-
u Spedned
there ddlbezme
viAeaceof~d~axl
Wtem$nm
sistancebehmen the
Initial d
ffml ~e
it 25° **C @a
m
QEX- *3
percentor M spaclfied(see 3.1).
is
man reuwkml am! tegted M ~uiad
la
k.6.8,
themahaUbem~
ufmchnical~md~e~
iams~
ahau
rmt exceedi4 pmmsxt
or u qecified
(see
3.1).
3.13
‘kunmlre
cyclin&
)
stm32/stm8
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