JANTX2N3821 datasheet, PDF - EEWORLD Datasheet

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JANTX2N3821: DescriptionTRANSISTOR,JFET,N-CHANNEL,50V V(BR)DSS,2.5MA I(DSS),TO-72; CategoryDiscrete semiconductor The transistor; File Size102KB，14 Pages; ManufacturerIntersil ( Renesas ); Websitehttp://www.intersil.com/cda/home/

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JANTX2N3821 Overview

TRANSISTOR,JFET,N-CHANNEL,50V V(BR)DSS,2.5MA I(DSS),TO-72

JANTX2N3821 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	103788307
Reach Compliance Code	not_compliant
ECCN code	EAR99
FET technology	JUNCTION
JESD-609 code	e0
Maximum operating temperature	200 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.3 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)

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The documentation and process

conversion measures necessary to comply

with this revision shall be completed by

19 June 2003.

INCH-POUND

MIL-PRF-19500/375F

19 March 2003

SUPERSEDING

MIL-PRF-19500/375E

2 October 2001

PERFORMANCE SPECIFICATION

* SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE,

SILICON, TYPES 2N3821, 2N3821UB, 2N3822, 2N3822UB, 2N3823, AND 2N3823UB

JAN, JANTX, JANTXV, AND JANS

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for N-channel, junction, silicon, field-effect

depletion mode transistors. Four levels of product assurance are provided for each device type as specified in

MIL-PRF-19500.

* 1.2 Physical dimensions. See figure 1 (similar to TO-72) and figure 2 (surface mount).

* 1.3 Maximum ratings.

(1)

= +25°C

and V

2N3821

2N3822

2N3823

2N3821UB 2N3822UB 2N3823UB

V dc

2N3821

2N3821UB

V dc

GSR

2N3822

2N3822UB

V dc

2N3823

2N3823UB

V dc

and T

STG

°C

-55 to +200

300

mA dc

(1) Derate linearly, 1.7 mW/°C for T

≥

+25°C.

* 1.4 Primary electrical characteristics.

DSS

(1)

= 15 V dc

= 0

GS(off)

= 15 V dc

= 0.5 nA dc

= 15 V dc

= 0,

= 1 MΩ

f = 10 Hz

2N3823

2N3823UB

2N3821

2N3822

2N3821UB 2N3822UB

= 15 V V

= 15 V

= 0,

= 1 MΩ R

= 1 MΩ

f = 1 kHz f = 105 MHz

All

types

2N3823

2N3823UB

2N3821

2N3822

2N3823

2N3821UB 2N3822UB 2N3823UB

2N3821

2N3821UB

2N3822

2N3822UB

mA dc

Min

Max

0.5

2.5

mA dc

2.0

10.0

mA dc

4.0

20.0

V dc

4.0

6.0

8.0

5.0

2.5

(1) Pulsed (see 4.5.1).

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,

P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal

(DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

FSC 5961

MIL-PRF-19500/375F

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500 and as follows.

ISO

................... Insulation resistance, gate lead to case.

...................... rms value of the specified reference voltage in the specified circuit.

...................... rms value of the measured voltage between the specified points in the specified circuit.

| .................... Magnitude of small-signal common-source short-circuit output admittance.

S ........................ Unit of conductance or admittance (formerly mho).

3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in

MIL-PRF-19500 and on figure 1 and figure 2 herein.

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in paragraph 1.3, 1.4, and table I.

3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table 1.

* 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500, except for the UB suffix package. Marking on

the UB package shall consist of an abbreviated part number, the date code, and the manufacturers symbol or logo.

The prefixes JAN, JANTX, JANTXV, and JANS can be abbreviated as J, JX, JV, and JS respectively. The "2N"

prefix and the "UB" suffix can also be omitted.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4 VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4).

* 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

in 4.4.1 and 4.4.2 herein.

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