MCP6V11/1U/2/4
7.5 µA, 80 kHz Zero-Drift Op Amps
Features:
• High DC Precision:
- V
OS
Drift: ±50 nV/°C (maximum)
- V
OS
: ±8 µV (maximum)
- A
OL
: 112 dB (minimum, V
DD
= 5.5V)
- PSRR: 118 dB (minimum, V
DD
= 5.5V)
- CMRR: 119 dB (minimum, V
DD
= 5.5V)
- E
ni
: 2.1 µV
P-P
(typical), f = 0.1 Hz to 10 Hz
- E
ni
: 0.67 µV
P-P
(typical), f = 0.01 Hz to 1 Hz
• Low Power and Supply Voltages:
- I
Q
: 7.5 µA/amplifier (typical)
- Wide Supply Voltage Range: 1.6V to 5.5V
• Small Packages:
- Singles in SC70, SOT-23
- Duals in MSOP-8, 2×3 TDFN
- Quads in TSSOP-14
• Easy to Use:
- Rail-to-Rail Input/Output
- Gain Bandwidth Product: 80 kHz (typical)
- Unity Gain Stable
• Extended Temperature Range: -40°C to +125°C
Description:
The Microchip Technology Inc. MCP6V11/1U/2/4 family
of operational amplifiers provides input offset voltage
correction for very low offset and offset drift. These are
low-power devices, with a gain bandwidth product of
80 kHz (typical). They are unity gain stable, have
virtually no 1/f noise, and have good Power Supply
Rejection Ratio (PSRR) and Common Mode Rejection
Ratio (CMRR). These products operate with a single
supply voltage as low as 1.6V, while drawing
7.5 µA/amplifier (typical) of quiescent current.
The Microchip Technology Inc. MCP6V11/1U/2/4 op
amps are offered in single (MCP6V11 and
MCP6V11U), dual (MCP6V12) and quad (MCP6V14)
packages. They were designed using an advanced
CMOS process.
Package Types
MCP6V11
SOT-23
V
OUT
1
V
SS
2
V
IN
+ 3
5 V
DD
V
OUTA
V
INA
–
4 V
IN
– V
INA
+
V
SS
1
2
3
4
MCP6V12
MSOP
8
7
6
5
V
DD
V
OUTB
V
INB
–
V
INB
+
Typical Applications:
•
•
•
•
•
Portable Instrumentation
Sensor Conditioning
Temperature Measurement
DC Offset Correction
Medical Instrumentation
MCP6V11U
SC70, SOT-23
V
IN
+ 1
V
SS
2
V
IN
– 3
5 V
DD
4 V
OUT
MCP6V12
2×3 TDFN*
V
OUTA
1
V
INA
– 2
V
INA
+ 3
V
SS
4
EP
9
8 V
DD
7 V
OUTB
6 V
INB
–
5 V
INB
+
Design Aids:
•
•
•
•
•
SPICE Macro Models
FilterLab
®
Software
Microchip Advanced Part Selector (MAPS)
Analog Demonstration and Evaluation Boards
Application Notes
MCP6V14
TSSOP
1
2
3
4
V
INB
+ 5
V
INB
– 6
V
OUTB
7
V
OUTA
V
INA
–
V
INA
+
V
DD
14 V
OUTD
13 V
IND
–
12 V
IND
+
11 V
SS
10 V
INC
+
9 V
INC
–
8 V
OUTC
Related Parts:
•
•
•
•
MCP6V01/2/3: Auto-Zeroed, Spread Clock
MCP6V06/7/8: Auto-Zeroed
MCP6V26/7/8: Auto-Zeroed, Low Noise
MCP6V31/1U/2/4: Zero-Drift, Low Power
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
2012-2014 Microchip Technology Inc.
DS20005124B-page 1
MCP6V11/1U/2/4
Typical Application Circuit
V
IN
R
1
R
2
C
2
R
4
U
1
R
2
V
DD
/2
U
2
MCP6V11
Offset Voltage Correction for Power Driver
R
5
MCP6XXX
V
DD
/2
R
3
V
OUT
DS20005124B-page 2
2012-2014 Microchip Technology Inc.
MCP6V11/1U/2/4
1.0
1.1
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
DD
– V
SS
.................................................................................................................................................................6.5V
Current at Input Pins ..............................................................................................................................................±2 mA
Analog Inputs (V
IN
+ and V
IN
–)
(Note
1)
.....................................................................................V
SS
– 1.0V to V
DD
+1.0V
All other Inputs and Outputs .......................................................................................................V
SS
– 0.3V to V
DD
+0.3V
Difference Input voltage .................................................................................................................................|V
DD
– V
SS
|
Output Short Circuit Current ........................................................................................................................... Continuous
Current at Output and Supply Pins ...................................................................................................................... ±30 mA
Storage Temperature .............................................................................................................................-65°C to +150°C
Maximum Junction Temperature .......................................................................................................................... +150°C
ESD protection on all pins (HBM, CDM, MM)
2 kV, 1.5 kV, 400V
Note 1:
See
Section 4.2.1, Rail-to-Rail Inputs.
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
1.2
Specifications
DC ELECTRICAL SPECIFICATIONS
TABLE 1-1:
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.6V to +5.5V, V
SS
= GND,
V
CM
= V
DD
/3,V
OUT
= V
DD
/2, V
L
= V
DD
/2, R
L
= 100 kΩ to V
L
and C
L
= 20 pF (refer to
Figure 1-4
and
Figure 1-5).
Parameters
Input Offset
Input Offset Voltage
Input Offset Voltage Drift with
Temperature (Linear Temp. Co.)
Input Offset Voltage Quadratic
Temp. Co.
Power Supply Rejection Ratio
Input Bias Current and Impedance
Input Bias Current
Input Bias Current across Temperature
Input Offset Current
Input Offset Current across Temperature
Common Mode Input Impedance
Differential Input Impedance
Note 1:
2:
I
B
I
B
I
B
I
OS
I
OS
I
OS
Z
CM
Z
DIFF
—
—
0
—
—
-1
—
—
+5
+17
+2.9
±50
±80
±0.4
10
13
||6
10
13
||6
—
—
+5
—
—
+1
—
—
pA
pA
nA
pA
pA
nA
Ω||pF
Ω||pF
T
A
= +85°C
T
A
= +125°C
T
A
= +85°C
T
A
= +125°C
V
OS
TC
1
TC
2
PSRR
-8
-50
—
118
—
—
±0.08
135
+8
+50
—
—
µV
T
A
= +25°C
nV/°C T
A
= -40 to +125°C
(Note
1)
nV/°C
2
T
A
= -40 to +125°C
dB
Sym.
Min.
Typ.
Max.
Units
Conditions
For Design Guidance only; not tested.
Figure 2-18
shows how V
CML
and V
CMH
changed across temperature for the first production lot.
2012-2014 Microchip Technology Inc.
DS20005124B-page 3
MCP6V11/1U/2/4
TABLE 1-1:
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.6V to +5.5V, V
SS
= GND,
V
CM
= V
DD
/3,V
OUT
= V
DD
/2, V
L
= V
DD
/2, R
L
= 100 kΩ to V
L
and C
L
= 20 pF (refer to
Figure 1-4
and
Figure 1-5).
Parameters
Common Mode
Common Mode
Input Voltage Range Low
Common Mode
Input Voltage Range High
Common Mode Rejection Ratio
V
CML
V
CMH
CMRR
—
V
DD
+ 0.2
108
—
—
125
V
SS
0.15
—
—
V
V
dB
(Note
2)
(Note
2)
V
DD
= 1.6V,
V
CM
= -0.15V to 1.8V
(Note
2)
V
DD
= 5.5V,
V
CM
= -0.15V to 5.7V
(Note
2)
V
DD
= 1.6V,
V
OUT
= 0.3V to 1.4V
V
DD
= 5.5V,
V
OUT
= 0.3V to 5.3V
R
L
= 10 kΩ, G = +2,
0.5V input overdrive
R
L
= 100 kΩ, G = +2,
0.5V input overdrive
R
L
= 10 kΩ, G = +2,
0.5V input overdrive
R
L
= 100 kΩ, G = +2,
0.5V input overdrive
V
DD
= 1.6V
V
DD
= 5.5V
Sym.
Min.
Typ.
Max.
Units
Conditions
CMRR
119
135
—
dB
Open-Loop Gain
DC Open-Loop Gain (large signal)
A
OL
A
OL
Output
Minimum Output Voltage Swing
V
OL
V
OL
Maximum Output Voltage Swing
V
OH
V
OH
Output Short Circuit Current
Power Supply
Supply Voltage
Quiescent Current per amplifier
POR Trip Voltage
Note 1:
2:
V
DD
I
Q
V
POR
1.6
4
3
0.9
—
7.5
6.5
—
5.5
11
11
1.5
V
V
µA
I
O
= 0,
MCP6V11/1U
I
O
= 0,
MCP6V12/14
I
SC
I
SC
V
SS
—
V
DD
– 45
—
—
—
V
SS
+ 14
V
SS
+ 1.4
V
DD
– 14
V
DD
– 1.4
±5
±17
V
SS
+ 45
—
V
DD
—
—
—
mV
mV
mV
mV
mA
mA
100
112
120
135
—
—
dB
dB
For Design Guidance only; not tested.
Figure 2-18
shows how V
CML
and V
CMH
changed across temperature for the first production lot.
DS20005124B-page 4
2012-2014 Microchip Technology Inc.
MCP6V11/1U/2/4
TABLE 1-2:
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.6V to +5.5V, V
SS
= GND,
V
CM
= V
DD
/3, V
OUT
= V
DD
/2, V
L
= V
DD
/2, R
L
= 100 kΩ to V
L
and C
L
= 20 pF (refer to
Figure 1-4
and
Figure 1-5).
Parameters
Amplifier AC Response
Gain Bandwidth Product
Slew Rate
Phase Margin
Amplifier Noise Response
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Amplifier Distortion (Note
1)
Intermodulation Distortion (AC)
Amplifier Step Response
Start Up Time
Offset Correction Settling Time
Output Overdrive Recovery Time
Note 1:
2:
3:
t
STR
t
STL
t
ODR
—
—
—
2
300
450
—
—
—
ms
µs
µs
G = +1, 0.1% V
OUT
settling
(Note
2)
G = +1, V
IN
step of 2V,
V
OS
within 100 µV of its final value
G = -10, ±0.5V input overdrive to V
DD
/2,
V
IN
50% point to V
OUT
90% point
(Note
3)
IMD
—
50
—
µV
PK
V
CM
tone = 50 mV
PK
at 100 Hz, G
N
= 1
E
ni
E
ni
e
ni
i
ni
—
—
—
—
0.67
2.1
102
4
—
—
—
—
µV
P-P
µV
P-P
fA/√Hz
f = 0.01 Hz to 1 Hz
f = 0.1 Hz to 10 Hz
GBWP
SR
PM
—
—
—
80
0.03
70
—
—
—
kHz
V/µs
°
G = +1
Sym.
Min.
Typ.
Max.
Units
Conditions
nV/√Hz f < 500 Hz
These parameters were characterized using the circuit in
Figure 1-6.
In
Figure 2-37
and
Figure 2-38,
there is an IMD tone at DC, a residual tone at1 kHz and other IMD tones and clock tones.
High gains behave differently; see
Section 4.3.3, Offset at Power Up.
t
ODR
includes some uncertainty due to clock edge timing.
TABLE 1-3:
TEMPERATURE SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, all limits are specified for: V
DD
= +1.6V to +5.5V,
V
SS
= GND.
Parameters
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SC-70
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 8L-2×3 TDFN
Thermal Resistance, 8L-MSOP
Thermal Resistance, 14L-TSSOP
Note 1:
JA
JA
θ
JA
θ
JA
θ
JA
—
—
—
—
—
209
201
53
211
100
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
T
A
T
A
T
A
-40
-40
-65
—
—
—
+125
+125
+150
°C
°C
°C
(Note
1)
Sym.
Min.
Typ.
Max.
Units
Conditions
Operation must not cause T
J
to exceed Maximum Junction Temperature specification (+150°C).
2012-2014 Microchip Technology Inc.
DS20005124B-page 5
Power technology
京公网安备 11010802033920号
EEWORLD
